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Search results for: Subject: High Wow (found: 91 regularSearch) ask for a document
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HFP0527_®_.PDF15/01/07Service Bulletin - Symptom:The customer may complain of high wow & flutter when playing tapes. - pag. 168 kB3693Sony (Bulletin)HCD-H550, HCD-H550M, HCD-H771, HCD-H881, HCD-H991AV, HCD-RX70, HCD-RX100AV, HCDW55
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Technical_Information_®_.pdf19/09/07Service Technical Information - Subject: Sound leakage from the High Tone speaker during the use of the headphone set - pag. 1255 kB276AIWAXR-H330MD
Kikusui_677A.pdf27/11/05Wow & Flutter Meter1364 kB2669Kikusui677A
Bulletin TVP0510_©_.pdf03/06/07Symptom: Saturation/low resolution is seen on the screen with high level white signal. Saturation starts around 1.2vp-p of signal level on all Y, Pb, Pr inputs - pag. 2966 kB459SonyKP-53HS10 KP-61HS10
GRO1.pdf11/02/08The GRO1 is high performance 14-16 GHz oscillator with off-chip resonator and it is designed on 2 um InGaP HBT Technology. It requires the High Q external resonator. The VCO is taking only 3.5 mA current and the layout is very small. Functional Diag54 kB69Rficsolutions Inc.GRO1
RGPA03(3.4-3.6 GHz GaAs pHEMT).pdf13/02/08The RGPA03 is a 3.4 to 3.6 GHz high efficiency GaAs Enhancement mode psuedomorphic high electron mobility transistor MMIC Power Amplifier. It has been designed for use in the 3.5 GHz WiMax systems. The part is matched at the input and output so no additi154 kB109Rficsolutions.IncRGPA03
dtv01_High Definition TV.pdf02/05/09Training Manual for High Definition TelevisionCircuit Description and Troubleshooting3035 kB377SONYHigh Definition TV
High Tec 4012.rar05/01/22 . Rare and Ancient Equipment DNT High Tec 4012.rar120 kB22DNTHigh Tec 4012
RGLNA09(5.15-5.35 GHz GaAs pHEMT ).pdf13/02/08The RGLNA09 is 5.15 to 5.35 GHz high efficiency GaAs Enhancement mode psuedomorphic high electron mobility transistor Low noise amplifier .The device is designed for 802.11a and WLAN MIMO system. The noise figure is 1.4 dB at 5.25 GHz. The RGLNA09 i36 kB61Rficsolutions.IncRGLNA09
RGLNA08(2.4-2.5 GHz GaAs pHEMT).pdf13/02/08The RGLNA08 is 2.4 to 2.5 GHz high efficiency GaAs Enhancement mode psuedomorphic high electron mobility transistor Low noise amplifier. The device is designed for 802.11b/g and WLAN MIMO system. The noise figure is 1.5 dB at 2.4 GHz and die area is77 kB64Rficsolutions.IncRGLNA08
RJP04__3.4_3.6GHz_SiGe BiCMOS_PA_.pdf12/02/08The RJPA04 is 3.4 to 3.6 GHz; high efficiency SiGe BiCMOS power amplifier. The device is designed to provide high efficiency with good power output for WiMax applications. The device consumes 310 mA and it gives the power output of 28 dBm at P1 dB co173 kB139Rficsolutions Inc.RJPA04
RGLNA02(2-6 GHz, 3V GaAs pHEMT).pdf13/02/08The RGLNA02 is 2.0 to 6.0 GHz high efficiency GaAs Enhancement mode psuedomorphic high electron mobility transistor Low noise amplifier. The device is designed for 802.11a/b/g and Wi-Fi systems. It gives Power Output of 5 dBm at P1 dB. The minimum no59 kB65Rficsolutions.IncRGLNA02
k2645.pdf04/10/09- High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Repetitive Avalanche Rated312 kB195FUSI2SK2645-01MR
5991-1711EN N2820A 21A High-Sensitivity_252C High Dynamic Range Current Probes - Data Sheet c201410312/11/21 Agilent 5991-1711EN N2820A 21A High-Sensitivity_252C High Dynamic Range Current Probes - Data Sheet c20141030 [7].pdf358 kB1Agilent5991-1711EN N2820A 21A High-Sensitivity 252C High Dynamic Range Current Probes - Data Sheet c2014103
RGPA04(4.9-5.9 GHz GaAs pHEMT).pdf13/02/08The RGPA04 is a 4.9 to 5.9 GHz high efficiency GaAs Enhancement mode psuedomorphic high electron mobility transistor MMIC power amplifier. The device is designed for 802.11a WLAN system. The part is matched at the input and output so no additional RF104 kB99Rficsolutions.IncRGPA04
SSM3K7002FU - High Speed Switching Applications.pdf24/07/20 . Electronic Components Datasheets Various SSM3K7002FU - High Speed Switching Applications.pdf162 kB4VariousSSM3K7002FU - High Speed Switching Applications
RGPA05(1.85-1.91 GHz GaAs pHEMT ).pdf13/02/08The RGPA05 is a 1.85 to 1.91 GHz high efficiency GaAs Enhancement mode psuedomorphic high electron mobility transistor MMIC power stage. This power stage can be preceded by a Driver stage to realize a complete amplifier. It has been designed speciall118 kB126Rficsolutions.IncRGPA05
Safe High Voltage Measurement.pdf05/03/20 Tektronix publikacje Safe High Voltage Measurement.pdf246 kB7TektronixSafe High Voltage Measurement
2562 Meas are Low in High R.pdf13/02/20 Keithley Appnotes 2562 Meas are Low in High R.pdf51 kB2Keithley2562 Meas are Low in High R
2526 High Accuracy DMMs1.pdf20/02/20 Keithley Appnotes 2526 High Accuracy DMMs1.pdf121 kB1Keithley2526 High Accuracy DMMs1

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