| File | Date | Descr | Size | Popular | Mfg | Model |
| The GEDA01 is 7.0 GHz to 20.0 GHz low power : Full Text Matches - Check >> |
| The GEDA01 is 7.0 GHz to 20.0 GHz low power : Forum Matches - Check >> |
| The GEDA01 is 7.0 GHz to 20.0 GHz low power : Found in chassis2model |
| Found in: model (1) |
| GEDA01.pdf | 11/02/08 | The GEDA01 is 7.0 GHz to 20.0 GHz low power
single stage buffer amplifier. The amplifier is
designed using 2 μm InGaP HBT Technology for
high frequency applications.
Driver amplifier shows gain of 4.5 dB at 20 GHz with
power output of 9 dBm. It | 48 kB | 518 | Rficsolutions Inc. | The GEDA01 is 7.0 GHz to 20.0 GHz low power |
| Found in: fulltext index (99) |
| GEDA02.pdf | 11/02/08 | The GEDA02 is 20 GHz to 40 GHz low power buffer
amplifier. The amplifier is designed using 2 μm
InGaP HBT process for high frequency applications.
Driver amplifier shows gain of 1dB at 40 GHz with
power output of 0dBm. It operates at 4.2Volts. | 44 kB | 278 | Rficsolutions Inc. | The GEDA02 is 20 GHz to 40 GHz low power buffer |
| RGLNA10(7.0-26.0 GHz GaAs pHEMT).pdf | 13/02/08 | The RGLNA10 is 7.0-26.0 GHz; Low Noise
Distributed Amplifiers using GaAs pHEMT
Technology. The self-biased amplifier provides 19
dB of gain and 14 dBm of output power at P1 dB
gain compression while requiring only 86 mA from a
single 3.0 V supply.
G | 44 kB | 198 | Rficsolutions.Inc | RGLNA10 |
| GRFM1.pdf | 11/02/08 | The GRFM1 is 10 GHz to 20 GHz Frequency
multiplier designed on 2 um InGaP HBT process.
GRFM1 multiplies the input frequency from 10 GHz
to 20 GHz by the factor of 2 so as to produce the
output of 20 GHz to 40 GHz. Conversion gain of
frequency multipl | 41 kB | 136 | Rficsolutions Inc. | GRFM1 |
| RTLNA01.pdf | 12/02/08 | The RTLNA01 is 2 to 4 GHz; Low Noise Amplifier IP
Block .The device is designed for 802.11 b/g and
Cellular system. The LNA has input and output
matching off-chip which will provide the flexibility to
tune the LNA for low noise figure.
The LNA is bia | 61 kB | 109 | Rficsolutions Inc. | RTLNA01 |
| RGLNA02(2-6 GHz, 3V GaAs pHEMT).pdf | 13/02/08 | The RGLNA02 is 2.0 to 6.0 GHz high efficiency
GaAs Enhancement mode psuedomorphic high
electron mobility transistor Low noise amplifier. The
device is designed for 802.11a/b/g and Wi-Fi
systems. It gives Power Output of 5 dBm at P1 dB.
The minimum no | 59 kB | 65 | Rficsolutions.Inc | RGLNA02 |
| RGLNA06(2-6 GHz,3.3 V GaAs pHEMT).pdf | 13/02/08 | The RGLNA06 is a broadband high efficiency GaAs
Enhancement mode pHEMT Low Noise Amplifier.
The MMIC Low Noise Amplifier doesn’t require any
off-chip component. The Broadband LNA is
designed for the 802.11a/b/g/n system.
The LNA covers a wide range o | 54 kB | 78 | Rficsolutions.Inc | RGLNA06 |
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| RGLNA03.pdf | 13/12/07 | broadband Low noise amplifier
2 GHz to 12 GHz | 114 kB | 98 | | |
| RJP05 _2.4GHz_WLAN_PA_.pdf | 12/02/08 | The RJP05 is 2.4 GHz to 2.5 GHz; high efficiency
Power stage for WLAN Power Amplifier. The
Amplifier is designed using 0.18um SiGe BiCMOS
process for 802.11 b/g WLAN systems.
Power amplifier shows PAE of 31% at 24 dBm
power with output match off-chip | 206 kB | 491 | Rficsolutions Inc. | RJP05 |
| RGLNA03(2-12 GHz GaAs pHEMT).pdf | 13/02/08 | The RGLNA03 is 2.0 to 12.0 GHz high efficiency GaAs Enhancement mode p-HEMT Low noise amplifier .The device is designed for 802.11a/b/g standard.
The minimum noise figure achieved is 1.5 dB at 2 GHz. A single 3.5V and 12 mA current bias the LNA. No input | 114 kB | 92 | Rficsolutions.Inc | RGLNA03 |
| RGLNA11(2-6 GHz GaAs pHEMT).pdf | 13/02/08 | The RGLNA11 is a broadband high efficiency GaAs
Enhancement mode pHEMT Low Noise Amplifier.
The device is designed for use in the 802.11a/b/g
and WLAN MIMO system.
The LNA covers a wide range of frequency from 2 to
6 GHz. The noise figure is 1.7 dB a | 126 kB | 55 | Rficsolutions.Inc | RGLNA11 |
| RGLNA09(5.15-5.35 GHz GaAs pHEMT ).pdf | 13/02/08 | The RGLNA09 is 5.15 to 5.35 GHz high efficiency
GaAs Enhancement mode psuedomorphic high
electron mobility transistor Low noise amplifier .The
device is designed for 802.11a and WLAN MIMO
system.
The noise figure is 1.4 dB at 5.25 GHz. The
RGLNA09 i | 36 kB | 61 | Rficsolutions.Inc | RGLNA09 |
| RJL01_1.5_1.7GHz_GPS_LNA_.pdf | 12/02/08 | The RJL01 is 1.5 to 1.7 GHz, Low Noise Amplifier
IP Block. The LNA is designed on the 0.18um SiGe
BiCMOS Process. The device is designed for GPS
system. The LNA has provision for mode control to
turn off.
It requires a single +3.0 Volt supply and con | 169 kB | 198 | Rficsolutions Inc. | RJL01 |
| RGLNA08(2.4-2.5 GHz GaAs pHEMT).pdf | 13/02/08 | The RGLNA08 is 2.4 to 2.5 GHz high efficiency
GaAs Enhancement mode psuedomorphic high
electron mobility transistor Low noise amplifier. The
device is designed for 802.11b/g and WLAN MIMO
system.
The noise figure is 1.5 dB at 2.4 GHz and die area
is | 77 kB | 64 | Rficsolutions.Inc | RGLNA08 |
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| A Packaged 60 GHz Low-Power Transceiver with Integrated Antennas for Short-Range Communications 5991 | 09/11/21 | Agilent A Packaged 60 GHz Low-Power Transceiver with Integrated Antennas for Short-Range Communications 5991-3774EN c20140711 [4].pdf | 629 kB | 1 | Agilent | A Packaged 60 GHz Low-Power Transceiver with Integrated Antennas for Short-Range Communications 5991 |
| GRDA1.pdf | 11/02/08 | The GRDA1 is 10 GHz to 20 GHz differential
amplifier designed on 2 um InGaP HBT process.
The gain of GRDA1 is 5 dB typically with flatness of
±3dB over the entire bandwidth. Typical current
requirement for GRDA1 is 24 mA.
The one dB compression point | 46 kB | 75 | Rficsolutions Inc. | GRDA1 |
| GHZ.pdf | 25/06/20 | . Electronic Components Datasheets Passive components capacitors CDD G Gemcon 2006 Radial GHZ.pdf | 170 kB | 0 | Radial | GHZ |
| RS01_1.7_2.7GHz_ single stage LNA_.pdf | 12/02/08 | The RS01 is 1.7 to 2.7 GHz; high efficiency Single
stage Low Noise Amplifier designed on 0.18μm
SiGe BiCMOS technology. The device is designed
for 802.11b/g standard and WLAN MIMO system.
The simulated noise figure is as low as 1.2 dB at 2.0
GHz | 184 kB | 78 | Rficsolutions Inc. | RS01 |
| RGPA05(1.85-1.91 GHz GaAs pHEMT ).pdf | 13/02/08 | The RGPA05 is a 1.85 to 1.91 GHz high efficiency
GaAs Enhancement mode psuedomorphic high
electron mobility transistor MMIC power stage. This
power stage can be preceded by a Driver stage to
realize a complete amplifier.
It has been designed speciall | 118 kB | 126 | Rficsolutions.Inc | RGPA05 |
| RGPA03(3.4-3.6 GHz GaAs pHEMT).pdf | 13/02/08 | The RGPA03 is a 3.4 to 3.6 GHz high efficiency GaAs Enhancement mode psuedomorphic high electron mobility transistor MMIC Power Amplifier. It has been designed for use in the 3.5 GHz WiMax systems.
The part is matched at the input and output so no additi | 154 kB | 109 | Rficsolutions.Inc | RGPA03 |