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Search results for: The GRO1 is high performance 14-16 GHz oscillator (found: 99 regularSearch) ask for a document
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GRO1.pdf11/02/08The GRO1 is high performance 14-16 GHz oscillator with off-chip resonator and it is designed on 2 um InGaP HBT Technology. It requires the High Q external resonator. The VCO is taking only 3.5 mA current and the layout is very small. Functional Diag54 kB69Rficsolutions Inc.GRO1
Found in: fulltext index (98)
RJVC02.pdf11/02/08RJVC02 is 2.0 - 6.0 GHz, voltage controlled oscillator. It can operate at 1.8 V supply and consumes only 1.0 mA current. The tuning bandwidth of the oscillator is 4 GHz with good phase noise performance.72 kB51Rficsolutions Inc.RJVC02 is 2.0 - 6.0 GHz, voltage controlled
RJVC02.pdf11/02/08RJVC02 is 2.0 - 6.0 GHz, voltage controlled oscillator. It can operate at 1.8 V supply and consumes only 1.0 mA current. The tuning bandwidth of the oscillator is 4 GHz with good phase noise performance.72 kB55Rficsolutions Inc.RJVC02 is 2.0 - 6.0 GHz, voltage controlled
RJVC01.pdf11/02/08RJVC01 is 0.5 - 1.15 GHz, voltage controlled oscillator. It can operate at 1.2 V supply and consumes only 2.5 mA current. The tuning bandwidth of the oscillator is 650 MHz with good phase noise performance.62 kB99Rficsolutions Inc.RJVC01 is 0.5 - 1.15 GHz, voltage controlled
RGLNA09(5.15-5.35 GHz GaAs pHEMT ).pdf13/02/08The RGLNA09 is 5.15 to 5.35 GHz high efficiency GaAs Enhancement mode psuedomorphic high electron mobility transistor Low noise amplifier .The device is designed for 802.11a and WLAN MIMO system. The noise figure is 1.4 dB at 5.25 GHz. The RGLNA09 i36 kB61Rficsolutions.IncRGLNA09
RGLNA08(2.4-2.5 GHz GaAs pHEMT).pdf13/02/08The RGLNA08 is 2.4 to 2.5 GHz high efficiency GaAs Enhancement mode psuedomorphic high electron mobility transistor Low noise amplifier. The device is designed for 802.11b/g and WLAN MIMO system. The noise figure is 1.5 dB at 2.4 GHz and die area is77 kB64Rficsolutions.IncRGLNA08
RGLNA02(2-6 GHz, 3V GaAs pHEMT).pdf13/02/08The RGLNA02 is 2.0 to 6.0 GHz high efficiency GaAs Enhancement mode psuedomorphic high electron mobility transistor Low noise amplifier. The device is designed for 802.11a/b/g and Wi-Fi systems. It gives Power Output of 5 dBm at P1 dB. The minimum no59 kB65Rficsolutions.IncRGLNA02
GRVO3.pdf11/02/08The GRV03 is 14 to 21 GHz: broadband Negative Resistance Generator designed using 2 um HBT Technology. The GRV03 consumes only 4 mA current and the die area is very small. The phase noise of the oscillator can be improved using external high Q resona58 kB75Rficsolutions Inc.GRV03
RGPA03(3.4-3.6 GHz GaAs pHEMT).pdf13/02/08The RGPA03 is a 3.4 to 3.6 GHz high efficiency GaAs Enhancement mode psuedomorphic high electron mobility transistor MMIC Power Amplifier. It has been designed for use in the 3.5 GHz WiMax systems. The part is matched at the input and output so no additi154 kB109Rficsolutions.IncRGPA03
RGDA01(2-6 GHz GaAs pHEMT).pdf13/02/08The RGDA01 is 2.0 to 6.0 GHz GaAs Enhancement mode psuedomorphic high electron mobility transistor Driver Amplifier. The device is designed for IEEE 802.11a/b/g, WLAN standards and Cellular system. The driver amplifier can provide upto 20 dBm power 74 kB122Rficsolutions.IncRGDA01
RGLNA11(2-6 GHz GaAs pHEMT).pdf13/02/08The RGLNA11 is a broadband high efficiency GaAs Enhancement mode pHEMT Low Noise Amplifier. The device is designed for use in the 802.11a/b/g and WLAN MIMO system. The LNA covers a wide range of frequency from 2 to 6 GHz. The noise figure is 1.7 dB a126 kB55Rficsolutions.IncRGLNA11
RJP05 _2.4GHz_WLAN_PA_.pdf12/02/08The RJP05 is 2.4 GHz to 2.5 GHz; high efficiency Power stage for WLAN Power Amplifier. The Amplifier is designed using 0.18um SiGe BiCMOS process for 802.11 b/g WLAN systems. Power amplifier shows PAE of 31% at 24 dBm power with output match off-chip206 kB491Rficsolutions Inc.RJP05
RGPA04(4.9-5.9 GHz GaAs pHEMT).pdf13/02/08The RGPA04 is a 4.9 to 5.9 GHz high efficiency GaAs Enhancement mode psuedomorphic high electron mobility transistor MMIC power amplifier. The device is designed for 802.11a WLAN system. The part is matched at the input and output so no additional RF104 kB99Rficsolutions.IncRGPA04
GEDA01.pdf11/02/08The GEDA01 is 7.0 GHz to 20.0 GHz low power single stage buffer amplifier. The amplifier is designed using 2 μm InGaP HBT Technology for high frequency applications. Driver amplifier shows gain of 4.5 dB at 20 GHz with power output of 9 dBm. It 48 kB517Rficsolutions Inc.The GEDA01 is 7.0 GHz to 20.0 GHz low power
RDA03(2-4 GHz Driver Amp).pdf13/02/08The RDA03 is a 2.0 to 4.0 GHz, high gain Driver Amplifier. It provides very good gain flatness over the band. It requires +3.3 Volt supply. It has tunability by having some off chip components. It has the option to optimize externally with off chip i128 kB96Rficsolutions.IncRDA03
RGLNA06(2-6 GHz,3.3 V GaAs pHEMT).pdf13/02/08The RGLNA06 is a broadband high efficiency GaAs Enhancement mode pHEMT Low Noise Amplifier. The MMIC Low Noise Amplifier doesn’t require any off-chip component. The Broadband LNA is designed for the 802.11a/b/g/n system. The LNA covers a wide range o54 kB78Rficsolutions.IncRGLNA06
GEDA02.pdf11/02/08The GEDA02 is 20 GHz to 40 GHz low power buffer amplifier. The amplifier is designed using 2 μm InGaP HBT process for high frequency applications. Driver amplifier shows gain of 1dB at 40 GHz with power output of 0dBm. It operates at 4.2Volts.44 kB278Rficsolutions Inc.The GEDA02 is 20 GHz to 40 GHz low power buffer
RGPA05(1.85-1.91 GHz GaAs pHEMT ).pdf13/02/08The RGPA05 is a 1.85 to 1.91 GHz high efficiency GaAs Enhancement mode psuedomorphic high electron mobility transistor MMIC power stage. This power stage can be preceded by a Driver stage to realize a complete amplifier. It has been designed speciall118 kB126Rficsolutions.IncRGPA05
RGLNA03(2-12 GHz GaAs pHEMT).pdf13/02/08The RGLNA03 is 2.0 to 12.0 GHz high efficiency GaAs Enhancement mode p-HEMT Low noise amplifier .The device is designed for 802.11a/b/g standard. The minimum noise figure achieved is 1.5 dB at 2 GHz. A single 3.5V and 12 mA current bias the LNA. No input114 kB92Rficsolutions.IncRGLNA03
RJP04__3.4_3.6GHz_SiGe BiCMOS_PA_.pdf12/02/08The RJPA04 is 3.4 to 3.6 GHz; high efficiency SiGe BiCMOS power amplifier. The device is designed to provide high efficiency with good power output for WiMax applications. The device consumes 310 mA and it gives the power output of 28 dBm at P1 dB co173 kB139Rficsolutions Inc.RJPA04

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