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Search results for: The GRV02 is 10 to 15 GHz; broadband VCO (found: 100 regularSearch) ask for a document
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The GRV02 is 10 to 15 GHz; broadband VCO : Found in chassis2model
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GRVO2.pdf11/02/08The GRV02 is 10 to 15 GHz; broadband VCO designed on 2 um GaAs HBT Technology. The resonator part is split on-chip inductor and off-chip Varactor. The VCO consumes only 3.5 mA current and the layout is very tiny. The phase noise of the GEV03 can be i64 kB97Rficsolutions Inc.GRV02
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GEVO3.pdf11/02/08The GEV03 is 15 to 20 GHz broadband VCO designed on 2 um GaAs HBT process. The device is designed for high frequency applications. The resonator part is split into on-chip inductor and offchip varactor. The GEV03 consumes only 3.5 mA current. The ph44 kB67Rficsolutions Inc.GEV03
GRVO3.pdf11/02/08The GRV03 is 14 to 21 GHz: broadband Negative Resistance Generator designed using 2 um HBT Technology. The GRV03 consumes only 4 mA current and the die area is very small. The phase noise of the oscillator can be improved using external high Q resona58 kB75Rficsolutions Inc.GRV03
RGLNA06(2-6 GHz,3.3 V GaAs pHEMT).pdf13/02/08The RGLNA06 is a broadband high efficiency GaAs Enhancement mode pHEMT Low Noise Amplifier. The MMIC Low Noise Amplifier doesn’t require any off-chip component. The Broadband LNA is designed for the 802.11a/b/g/n system. The LNA covers a wide range o54 kB78Rficsolutions.IncRGLNA06
RGLNA11(2-6 GHz GaAs pHEMT).pdf13/02/08The RGLNA11 is a broadband high efficiency GaAs Enhancement mode pHEMT Low Noise Amplifier. The device is designed for use in the 802.11a/b/g and WLAN MIMO system. The LNA covers a wide range of frequency from 2 to 6 GHz. The noise figure is 1.7 dB a126 kB55Rficsolutions.IncRGLNA11
RGLNA03.pdf13/12/07broadband Low noise amplifier 2 GHz to 12 GHz114 kB98
RS03 _2_6GHz_Single stage_LNA_.pdf12/02/08The RS03 is 2 to 6 GHz; high efficiency Broadband Single Stage Low noise amplifier, designed on 0.35- μm SiGe BiCMOS technology. The device is designed for use in the 802.11a/b/g and WLAN MIMO system. Functional Diagram . The noise figure is 1.202 kB78Rficsolutions Inc.RS03
GRO1.pdf11/02/08The GRO1 is high performance 14-16 GHz oscillator with off-chip resonator and it is designed on 2 um InGaP HBT Technology. It requires the High Q external resonator. The VCO is taking only 3.5 mA current and the layout is very small. Functional Diag54 kB69Rficsolutions Inc.GRO1
GRFM1.pdf11/02/08The GRFM1 is 10 GHz to 20 GHz Frequency multiplier designed on 2 um InGaP HBT process. GRFM1 multiplies the input frequency from 10 GHz to 20 GHz by the factor of 2 so as to produce the output of 20 GHz to 40 GHz. Conversion gain of frequency multipl41 kB133Rficsolutions Inc.GRFM1
GEDA01.pdf11/02/08The GEDA01 is 7.0 GHz to 20.0 GHz low power single stage buffer amplifier. The amplifier is designed using 2 μm InGaP HBT Technology for high frequency applications. Driver amplifier shows gain of 4.5 dB at 20 GHz with power output of 9 dBm. It 48 kB517Rficsolutions Inc.The GEDA01 is 7.0 GHz to 20.0 GHz low power
GEDA02.pdf11/02/08The GEDA02 is 20 GHz to 40 GHz low power buffer amplifier. The amplifier is designed using 2 μm InGaP HBT process for high frequency applications. Driver amplifier shows gain of 1dB at 40 GHz with power output of 0dBm. It operates at 4.2Volts.44 kB278Rficsolutions Inc.The GEDA02 is 20 GHz to 40 GHz low power buffer
GHZ.pdf25/06/20 . Electronic Components Datasheets Passive components capacitors CDD G Gemcon 2006 Radial GHZ.pdf170 kB0RadialGHZ
GRDA1.pdf11/02/08The GRDA1 is 10 GHz to 20 GHz differential amplifier designed on 2 um InGaP HBT process. The gain of GRDA1 is 5 dB typically with flatness of ±3dB over the entire bandwidth. Typical current requirement for GRDA1 is 24 mA. The one dB compression point46 kB75Rficsolutions Inc.GRDA1
RGLNA09(5.15-5.35 GHz GaAs pHEMT ).pdf13/02/08The RGLNA09 is 5.15 to 5.35 GHz high efficiency GaAs Enhancement mode psuedomorphic high electron mobility transistor Low noise amplifier .The device is designed for 802.11a and WLAN MIMO system. The noise figure is 1.4 dB at 5.25 GHz. The RGLNA09 i36 kB61Rficsolutions.IncRGLNA09
RGLNA10(7.0-26.0 GHz GaAs pHEMT).pdf13/02/08The RGLNA10 is 7.0-26.0 GHz; Low Noise Distributed Amplifiers using GaAs pHEMT Technology. The self-biased amplifier provides 19 dB of gain and 14 dBm of output power at P1 dB gain compression while requiring only 86 mA from a single 3.0 V supply. G44 kB198Rficsolutions.IncRGLNA10
RGLNA08(2.4-2.5 GHz GaAs pHEMT).pdf13/02/08The RGLNA08 is 2.4 to 2.5 GHz high efficiency GaAs Enhancement mode psuedomorphic high electron mobility transistor Low noise amplifier. The device is designed for 802.11b/g and WLAN MIMO system. The noise figure is 1.5 dB at 2.4 GHz and die area is77 kB64Rficsolutions.IncRGLNA08
Back-fire.pdf20/10/05Antena wireless 2.4 Ghz208 kB1213Pacificbackfire 2.4 ghz
RGLNA02(2-6 GHz, 3V GaAs pHEMT).pdf13/02/08The RGLNA02 is 2.0 to 6.0 GHz high efficiency GaAs Enhancement mode psuedomorphic high electron mobility transistor Low noise amplifier. The device is designed for 802.11a/b/g and Wi-Fi systems. It gives Power Output of 5 dBm at P1 dB. The minimum no59 kB65Rficsolutions.IncRGLNA02
RJVC02.pdf11/02/08RJVC02 is 2.0 - 6.0 GHz, voltage controlled oscillator. It can operate at 1.8 V supply and consumes only 1.0 mA current. The tuning bandwidth of the oscillator is 4 GHz with good phase noise performance.72 kB51Rficsolutions Inc.RJVC02 is 2.0 - 6.0 GHz, voltage controlled
RJVC02.pdf11/02/08RJVC02 is 2.0 - 6.0 GHz, voltage controlled oscillator. It can operate at 1.8 V supply and consumes only 1.0 mA current. The tuning bandwidth of the oscillator is 4 GHz with good phase noise performance.72 kB55Rficsolutions Inc.RJVC02 is 2.0 - 6.0 GHz, voltage controlled

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