| File | Date | Descr | Size | Popular | Mfg | Model |
| 802 - 302B : Full Text Matches - Check >> |
| 802 - 302B : Forum Matches - Check >> |
| Found in: model (1) |
| 802 302B.pdf | 03/02/11 | Bose 802, 302B, 802C Service Manual | 869 kB | 3834 | Bose | 802 - 302B |
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| Found in: fulltext index (51) |
| CD-802.pdf | 01/05/05 | Service Manual - CD-802 | 879 kB | 3058 | Roadstar | CD-802 |
| Toshiba SD-110Ex.part01.rar | 23/11/06 | 20 802 856 B, 11parts, 120 pages | 1953 kB | 457 | Toshiba | SD-110EB/EE/EL |
| RJM01_1.6_3GHz_Gillbert cell Mixer_.pdf | 12/02/08 | The RJM01 is 1.6 to 3.0 GHz; Low noise, Gilbert
Cell down conversion SiGe Mixer designed on 0.35
μm SiGe BiCMOS technology. The device is
designed for 802.11 b/g standard and WLAN MIMO
system.
Functional Diagram .
The noise figure is 4.43 dB an | 173 kB | 161 | Rficsolutions Inc. | RJM01 |
| RJP05 _2.4GHz_WLAN_PA_.pdf | 12/02/08 | The RJP05 is 2.4 GHz to 2.5 GHz; high efficiency
Power stage for WLAN Power Amplifier. The
Amplifier is designed using 0.18um SiGe BiCMOS
process for 802.11 b/g WLAN systems.
Power amplifier shows PAE of 31% at 24 dBm
power with output match off-chip | 206 kB | 485 | Rficsolutions Inc. | RJP05 |
| RS01_1.7_2.7GHz_ single stage LNA_.pdf | 12/02/08 | The RS01 is 1.7 to 2.7 GHz; high efficiency Single
stage Low Noise Amplifier designed on 0.18μm
SiGe BiCMOS technology. The device is designed
for 802.11b/g standard and WLAN MIMO system.
The simulated noise figure is as low as 1.2 dB at 2.0
GHz | 184 kB | 78 | Rficsolutions Inc. | RS01 |
| RS03 _2_6GHz_Single stage_LNA_.pdf | 12/02/08 | The RS03 is 2 to 6 GHz; high efficiency Broadband
Single Stage Low noise amplifier, designed on 0.35-
μm SiGe BiCMOS technology. The device is
designed for use in the 802.11a/b/g and WLAN
MIMO system.
Functional Diagram .
The noise figure is 1. | 202 kB | 78 | Rficsolutions Inc. | RS03 |
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| RTDA01.pdf | 12/02/08 | The RTDA01 is a 2.0 to 5.0 GHz; CMOS driver
amplifier. The device is designed for the 802.11
a/b/g WLAN systems.
The driver amplifier gives 18 dBm Pout for the
frequency range 2.0 to 5.0 GHz. The input and
output matching is on chip which reduces the | 56 kB | 153 | Rficsolutions Inc. | RTDA01 |
| RTLNA01.pdf | 12/02/08 | The RTLNA01 is 2 to 4 GHz; Low Noise Amplifier IP
Block .The device is designed for 802.11 b/g and
Cellular system. The LNA has input and output
matching off-chip which will provide the flexibility to
tune the LNA for low noise figure.
The LNA is bia | 61 kB | 109 | Rficsolutions Inc. | RTLNA01 |
| RFISFRT01(2.4-2.5 GHz).pdf | 13/02/08 | The RFISFRT01 is a monolithic integrated
transceiver front end suitable for 802.11b/g (2.4
GHz) application. This is the fully integrated
Transceiver Chip except passive filters.
It contains low noise amplifier, Power amplifier and a switch. The input | 133 kB | 212 | Rficsolutions.Inc | RFISFRT01 |
| RGDA01(2-6 GHz GaAs pHEMT).pdf | 13/02/08 | The RGDA01 is 2.0 to 6.0 GHz GaAs Enhancement
mode psuedomorphic high electron mobility
transistor Driver Amplifier. The device is designed
for IEEE 802.11a/b/g, WLAN standards and Cellular
system.
The driver amplifier can provide upto 20 dBm power
| 74 kB | 122 | Rficsolutions.Inc | RGDA01 |
| RGLNA01(0.7-3.0 GHz GaAs pHEMT).pdf | 13/02/08 | The RGLNA01 is 0.7 to 3.0 GHz high efficiency
GaAs Enhancement mode pHEMT Low Noise
Amplifier IP Block .The device is designed for use in
the IEEE 802.11b/g, PCS, PHS and Cellular system.
The die area of RGLNA01 is 0.8 mm x 0.7 mm, with
on chip input | 65 kB | 134 | Rficsolutions.Inc | RGLNA01 |
| RGLNA02(2-6 GHz, 3V GaAs pHEMT).pdf | 13/02/08 | The RGLNA02 is 2.0 to 6.0 GHz high efficiency
GaAs Enhancement mode psuedomorphic high
electron mobility transistor Low noise amplifier. The
device is designed for 802.11a/b/g and Wi-Fi
systems. It gives Power Output of 5 dBm at P1 dB.
The minimum no | 59 kB | 65 | Rficsolutions.Inc | RGLNA02 |
| RGLNA03(2-12 GHz GaAs pHEMT).pdf | 13/02/08 | The RGLNA03 is 2.0 to 12.0 GHz high efficiency GaAs Enhancement mode p-HEMT Low noise amplifier .The device is designed for 802.11a/b/g standard.
The minimum noise figure achieved is 1.5 dB at 2 GHz. A single 3.5V and 12 mA current bias the LNA. No input | 114 kB | 92 | Rficsolutions.Inc | RGLNA03 |
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| RGLNA06(2-6 GHz,3.3 V GaAs pHEMT).pdf | 13/02/08 | The RGLNA06 is a broadband high efficiency GaAs
Enhancement mode pHEMT Low Noise Amplifier.
The MMIC Low Noise Amplifier doesn’t require any
off-chip component. The Broadband LNA is
designed for the 802.11a/b/g/n system.
The LNA covers a wide range o | 54 kB | 78 | Rficsolutions.Inc | RGLNA06 |
| RGLNA08(2.4-2.5 GHz GaAs pHEMT).pdf | 13/02/08 | The RGLNA08 is 2.4 to 2.5 GHz high efficiency
GaAs Enhancement mode psuedomorphic high
electron mobility transistor Low noise amplifier. The
device is designed for 802.11b/g and WLAN MIMO
system.
The noise figure is 1.5 dB at 2.4 GHz and die area
is | 77 kB | 64 | Rficsolutions.Inc | RGLNA08 |
| RGLNA09(5.15-5.35 GHz GaAs pHEMT ).pdf | 13/02/08 | The RGLNA09 is 5.15 to 5.35 GHz high efficiency
GaAs Enhancement mode psuedomorphic high
electron mobility transistor Low noise amplifier .The
device is designed for 802.11a and WLAN MIMO
system.
The noise figure is 1.4 dB at 5.25 GHz. The
RGLNA09 i | 36 kB | 61 | Rficsolutions.Inc | RGLNA09 |
| RGLNA11(2-6 GHz GaAs pHEMT).pdf | 13/02/08 | The RGLNA11 is a broadband high efficiency GaAs
Enhancement mode pHEMT Low Noise Amplifier.
The device is designed for use in the 802.11a/b/g
and WLAN MIMO system.
The LNA covers a wide range of frequency from 2 to
6 GHz. The noise figure is 1.7 dB a | 126 kB | 55 | Rficsolutions.Inc | RGLNA11 |
| RGPA01(2.4-2.5 GHz GaAs pHEMT).pdf | 13/02/08 | The RGPA01 is a 2.4 to 2.5 GHz high efficiency
GaAs Enhancement Mode pHEMT MMIC power
amplifier. This MMIC power amplifier doesn’t require
any off chip components.
The device is designed for 802.11b/g and WLAN
MIMO system. The Power Amplifier exhibit | 69 kB | 137 | Rficsolutions.Inc | RGPA01 |
| RGPA04(4.9-5.9 GHz GaAs pHEMT).pdf | 13/02/08 | The RGPA04 is a 4.9 to 5.9 GHz high efficiency
GaAs Enhancement mode psuedomorphic high
electron mobility transistor MMIC power amplifier.
The device is designed for 802.11a WLAN system.
The part is matched at the input and output so no
additional RF | 104 kB | 99 | Rficsolutions.Inc | RGPA04 |