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Search results for: High Power Audio Amplifier Construction Manual 50 To 500 Watt_Slone (found: 78 regularSearch) ask for a document
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High Power Audio Amplifier Costruction Manual 50 To 500 Watt_Slone.z0119/04/10High Power Audio Amplifier Construction Manual 50 To 500 Watt_Slone3072 kB2775booksHigh Power Audio Amplifier Construction Manual 50 To 500 Watt_Slone
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RJP05 _2.4GHz_WLAN_PA_.pdf12/02/08The RJP05 is 2.4 GHz to 2.5 GHz; high efficiency Power stage for WLAN Power Amplifier. The Amplifier is designed using 0.18um SiGe BiCMOS process for 802.11 b/g WLAN systems. Power amplifier shows PAE of 31% at 24 dBm power with output match off-chip206 kB467Rficsolutions Inc.RJP05
RJP01 _1.9GHz_WCDMA_PA_.pdf12/02/08The RJP01 is 1.920 to 1.980 GHz high efficiency WCDMA Power Amplifier. The Amplifier is designed using 0.18 um SiGe BiCMOS technology. Power amplifier shows PAE of 41% at 28 dBm with off-chip output matching. It has been designed specially for use in238 kB155Rficsolutions Inc.RJP01
RJP04__3.4_3.6GHz_SiGe BiCMOS_PA_.pdf12/02/08The RJPA04 is 3.4 to 3.6 GHz; high efficiency SiGe BiCMOS power amplifier. The device is designed to provide high efficiency with good power output for WiMax applications. The device consumes 310 mA and it gives the power output of 28 dBm at P1 dB co173 kB136Rficsolutions Inc.RJPA04
polyvox_pm5000_esquema.JPG22/05/11High End Audio Power Amplifier1055 kB934PolyvoxPM-5000
micrologic_m1000.JPG22/05/11High End Audio Power Amplifier144 kB771MicrologicM-1000
RGPA01(2.4-2.5 GHz GaAs pHEMT).pdf13/02/08The RGPA01 is a 2.4 to 2.5 GHz high efficiency GaAs Enhancement Mode pHEMT MMIC power amplifier. This MMIC power amplifier doesn’t require any off chip components. The device is designed for 802.11b/g and WLAN MIMO system. The Power Amplifier exhibit69 kB136Rficsolutions.IncRGPA01
Onkyo Grand Integra M-510 SM.pdf26/04/06High end audio power amplifier service manual1786 kB3444
GEDA01.pdf11/02/08The GEDA01 is 7.0 GHz to 20.0 GHz low power single stage buffer amplifier. The amplifier is designed using 2 μm InGaP HBT Technology for high frequency applications. Driver amplifier shows gain of 4.5 dB at 20 GHz with power output of 9 dBm. It 48 kB491Rficsolutions Inc.The GEDA01 is 7.0 GHz to 20.0 GHz low power
RGPA05(1.85-1.91 GHz GaAs pHEMT ).pdf13/02/08The RGPA05 is a 1.85 to 1.91 GHz high efficiency GaAs Enhancement mode psuedomorphic high electron mobility transistor MMIC power stage. This power stage can be preceded by a Driver stage to realize a complete amplifier. It has been designed speciall118 kB126Rficsolutions.IncRGPA05
GEDA02.pdf11/02/08The GEDA02 is 20 GHz to 40 GHz low power buffer amplifier. The amplifier is designed using 2 μm InGaP HBT process for high frequency applications. Driver amplifier shows gain of 1dB at 40 GHz with power output of 0dBm. It operates at 4.2Volts.44 kB262Rficsolutions Inc.The GEDA02 is 20 GHz to 40 GHz low power buffer
Marantz-500 pwramp.pdf15/01/10power amplifier549 kB1410Marantz500
tmc_pal-500_linear_power_amplifier_1966.pdf20/06/20 . Rare and Ancient Equipment TMC tmc_pal-500_linear_power_amplifier_1966.pdf6842 kB7TMCtmc pal-500 linear power amplifier 1966
Eico460-Construction-Pages.pdf14/09/0920-pages of inserts from the kit version of the EICO-460 service & operations manual.2458 kB1655EICO460-Construction
Eico460-Construction-Pages.pdf14/09/0920-pages of inserts from the kit version of the EICO-460 service & operations manual.2458 kB832EICO460-Construction
gradiente_a2_esquema.zip22/05/11DC Active Servo Loop High Power Amplifier369 kB356GradienteA-II
ha2.jpg22/05/11DC Active Servo Loop High Power Amplifier370 kB194GradienteHA-II
RGPA03(3.4-3.6 GHz GaAs pHEMT).pdf13/02/08The RGPA03 is a 3.4 to 3.6 GHz high efficiency GaAs Enhancement mode psuedomorphic high electron mobility transistor MMIC Power Amplifier. It has been designed for use in the 3.5 GHz WiMax systems. The part is matched at the input and output so no additi154 kB109Rficsolutions.IncRGPA03
RGLNA02(2-6 GHz, 3V GaAs pHEMT).pdf13/02/08The RGLNA02 is 2.0 to 6.0 GHz high efficiency GaAs Enhancement mode psuedomorphic high electron mobility transistor Low noise amplifier. The device is designed for 802.11a/b/g and Wi-Fi systems. It gives Power Output of 5 dBm at P1 dB. The minimum no59 kB65Rficsolutions.IncRGLNA02
Alesis Matica 500-900 pwr sm.pdf18/12/08power amplifier1348 kB2057AlesisMatica 500-900

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