| File | Date | Descr | Size | Popular | Mfg | Model |
| RGL : Full Text Matches - Check >> |
| RGL : Found in chassis2model |
| Found in: model (8) |
| RGLNA11(2-6 GHz GaAs pHEMT).pdf | 13/02/08 | The RGLNA11 is a broadband high efficiency GaAs
Enhancement mode pHEMT Low Noise Amplifier.
The device is designed for use in the 802.11a/b/g
and WLAN MIMO system.
The LNA covers a wide range of frequency from 2 to
6 GHz. The noise figure is 1.7 dB a | 126 kB | 55 | Rficsolutions.Inc | RGLNA11 |
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| RGLNA10(7.0-26.0 GHz GaAs pHEMT).pdf | 13/02/08 | The RGLNA10 is 7.0-26.0 GHz; Low Noise
Distributed Amplifiers using GaAs pHEMT
Technology. The self-biased amplifier provides 19
dB of gain and 14 dBm of output power at P1 dB
gain compression while requiring only 86 mA from a
single 3.0 V supply.
G | 44 kB | 198 | Rficsolutions.Inc | RGLNA10 |
| RGLNA09(5.15-5.35 GHz GaAs pHEMT ).pdf | 13/02/08 | The RGLNA09 is 5.15 to 5.35 GHz high efficiency
GaAs Enhancement mode psuedomorphic high
electron mobility transistor Low noise amplifier .The
device is designed for 802.11a and WLAN MIMO
system.
The noise figure is 1.4 dB at 5.25 GHz. The
RGLNA09 i | 36 kB | 61 | Rficsolutions.Inc | RGLNA09 |
| RGLNA08(2.4-2.5 GHz GaAs pHEMT).pdf | 13/02/08 | The RGLNA08 is 2.4 to 2.5 GHz high efficiency
GaAs Enhancement mode psuedomorphic high
electron mobility transistor Low noise amplifier. The
device is designed for 802.11b/g and WLAN MIMO
system.
The noise figure is 1.5 dB at 2.4 GHz and die area
is | 77 kB | 64 | Rficsolutions.Inc | RGLNA08 |
| RGLNA06(2-6 GHz,3.3 V GaAs pHEMT).pdf | 13/02/08 | The RGLNA06 is a broadband high efficiency GaAs
Enhancement mode pHEMT Low Noise Amplifier.
The MMIC Low Noise Amplifier doesn’t require any
off-chip component. The Broadband LNA is
designed for the 802.11a/b/g/n system.
The LNA covers a wide range o | 54 kB | 78 | Rficsolutions.Inc | RGLNA06 |
| RGLNA03(2-12 GHz GaAs pHEMT).pdf | 13/02/08 | The RGLNA03 is 2.0 to 12.0 GHz high efficiency GaAs Enhancement mode p-HEMT Low noise amplifier .The device is designed for 802.11a/b/g standard.
The minimum noise figure achieved is 1.5 dB at 2 GHz. A single 3.5V and 12 mA current bias the LNA. No input | 114 kB | 92 | Rficsolutions.Inc | RGLNA03 |
| RGLNA02(2-6 GHz, 3V GaAs pHEMT).pdf | 13/02/08 | The RGLNA02 is 2.0 to 6.0 GHz high efficiency
GaAs Enhancement mode psuedomorphic high
electron mobility transistor Low noise amplifier. The
device is designed for 802.11a/b/g and Wi-Fi
systems. It gives Power Output of 5 dBm at P1 dB.
The minimum no | 59 kB | 65 | Rficsolutions.Inc | RGLNA02 |
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| RGLNA01(0.7-3.0 GHz GaAs pHEMT).pdf | 13/02/08 | The RGLNA01 is 0.7 to 3.0 GHz high efficiency
GaAs Enhancement mode pHEMT Low Noise
Amplifier IP Block .The device is designed for use in
the IEEE 802.11b/g, PCS, PHS and Cellular system.
The die area of RGLNA01 is 0.8 mm x 0.7 mm, with
on chip input | 65 kB | 134 | Rficsolutions.Inc | RGLNA01 |
| Found in: original (1) |
| RGL.pdf | 16/10/21 | . Electronic Components Datasheets Passive components capacitors CDD L Lelon Aluminum Electrolytic Capacitors - STD and Low ESR RGL.pdf | 169 kB | 0 | Aluminum Electrolytic Capacitors - STD and Low ESR | RGL |
| Found in: file name (1) |
| RGLNA03.pdf | 13/12/07 | broadband Low noise amplifier
2 GHz to 12 GHz | 114 kB | 98 | | |