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The GRDA1 is 10 GHz to 20 GHz differential : Full Text Matches - Check >> | ||||||
The GRDA1 is 10 GHz to 20 GHz differential : Forum Matches - Check >> | ||||||
The GRDA1 is 10 GHz to 20 GHz differential : Found in chassis2model | ||||||
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GRDA1.pdf | 11/02/08 | The GRDA1 is 10 GHz to 20 GHz differential amplifier designed on 2 um InGaP HBT process. The gain of GRDA1 is 5 dB typically with flatness of ±3dB over the entire bandwidth. Typical current requirement for GRDA1 is 24 mA. The one dB compression point | 46 kB | 75 | Rficsolutions Inc. | GRDA1 |
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Found in: fulltext index (99) | ||||||
GRFM1.pdf | 11/02/08 | The GRFM1 is 10 GHz to 20 GHz Frequency multiplier designed on 2 um InGaP HBT process. GRFM1 multiplies the input frequency from 10 GHz to 20 GHz by the factor of 2 so as to produce the output of 20 GHz to 40 GHz. Conversion gain of frequency multipl | 41 kB | 133 | Rficsolutions Inc. | GRFM1 |
GEDA01.pdf | 11/02/08 | The GEDA01 is 7.0 GHz to 20.0 GHz low power single stage buffer amplifier. The amplifier is designed using 2 μm InGaP HBT Technology for high frequency applications. Driver amplifier shows gain of 4.5 dB at 20 GHz with power output of 9 dBm. It | 48 kB | 517 | Rficsolutions Inc. | The GEDA01 is 7.0 GHz to 20.0 GHz low power |
GEDA02.pdf | 11/02/08 | The GEDA02 is 20 GHz to 40 GHz low power buffer amplifier. The amplifier is designed using 2 μm InGaP HBT process for high frequency applications. Driver amplifier shows gain of 1dB at 40 GHz with power output of 0dBm. It operates at 4.2Volts. | 44 kB | 276 | Rficsolutions Inc. | The GEDA02 is 20 GHz to 40 GHz low power buffer |
GHZ.pdf | 25/06/20 | . Electronic Components Datasheets Passive components capacitors CDD G Gemcon 2006 Radial GHZ.pdf | 170 kB | 0 | Radial | GHZ |
RGLNA11(2-6 GHz GaAs pHEMT).pdf | 13/02/08 | The RGLNA11 is a broadband high efficiency GaAs Enhancement mode pHEMT Low Noise Amplifier. The device is designed for use in the 802.11a/b/g and WLAN MIMO system. The LNA covers a wide range of frequency from 2 to 6 GHz. The noise figure is 1.7 dB a | 126 kB | 55 | Rficsolutions.Inc | RGLNA11 |
1130A 1.5 GHz InfiniiMax Differential and Single-ended Probes User_2527s Guide 01130-97006 [236].pdf | 07/06/21 | Agilent 1130A 1.5 GHz InfiniiMax Differential and Single-ended Probes User_2527s Guide 01130-97006 [236].pdf | 4323 kB | 16 | Agilent | 1130A 1.5 GHz InfiniiMax Differential and Single-ended Probes User 2527s Guide 01130-97006 [236] |
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RGLNA09(5.15-5.35 GHz GaAs pHEMT ).pdf | 13/02/08 | The RGLNA09 is 5.15 to 5.35 GHz high efficiency GaAs Enhancement mode psuedomorphic high electron mobility transistor Low noise amplifier .The device is designed for 802.11a and WLAN MIMO system. The noise figure is 1.4 dB at 5.25 GHz. The RGLNA09 i | 36 kB | 61 | Rficsolutions.Inc | RGLNA09 |
RGLNA10(7.0-26.0 GHz GaAs pHEMT).pdf | 13/02/08 | The RGLNA10 is 7.0-26.0 GHz; Low Noise Distributed Amplifiers using GaAs pHEMT Technology. The self-biased amplifier provides 19 dB of gain and 14 dBm of output power at P1 dB gain compression while requiring only 86 mA from a single 3.0 V supply. G | 44 kB | 198 | Rficsolutions.Inc | RGLNA10 |
U1818A B 7 12 GHz Active Differential Probes Quick Fact Sheet 5990-4919EN c20140528 [2].pdf | 23/05/21 | Agilent U1818A B 7 12 GHz Active Differential Probes Quick Fact Sheet 5990-4919EN c20140528 [2].pdf | 696 kB | 1 | Agilent | U1818A B 7 12 GHz Active Differential Probes Quick Fact Sheet 5990-4919EN c20140528 [2] |
RGLNA08(2.4-2.5 GHz GaAs pHEMT).pdf | 13/02/08 | The RGLNA08 is 2.4 to 2.5 GHz high efficiency GaAs Enhancement mode psuedomorphic high electron mobility transistor Low noise amplifier. The device is designed for 802.11b/g and WLAN MIMO system. The noise figure is 1.5 dB at 2.4 GHz and die area is | 77 kB | 64 | Rficsolutions.Inc | RGLNA08 |
Back-fire.pdf | 20/10/05 | Antena wireless 2.4 Ghz | 208 kB | 1213 | Pacific | backfire 2.4 ghz |
RGLNA03.pdf | 13/12/07 | broadband Low noise amplifier 2 GHz to 12 GHz | 114 kB | 98 | ||
RGLNA02(2-6 GHz, 3V GaAs pHEMT).pdf | 13/02/08 | The RGLNA02 is 2.0 to 6.0 GHz high efficiency GaAs Enhancement mode psuedomorphic high electron mobility transistor Low noise amplifier. The device is designed for 802.11a/b/g and Wi-Fi systems. It gives Power Output of 5 dBm at P1 dB. The minimum no | 59 kB | 65 | Rficsolutions.Inc | RGLNA02 |
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RJVC02.pdf | 11/02/08 | RJVC02 is 2.0 - 6.0 GHz, voltage controlled oscillator. It can operate at 1.8 V supply and consumes only 1.0 mA current. The tuning bandwidth of the oscillator is 4 GHz with good phase noise performance. | 72 kB | 50 | Rficsolutions Inc. | RJVC02 is 2.0 - 6.0 GHz, voltage controlled |
RJVC02.pdf | 11/02/08 | RJVC02 is 2.0 - 6.0 GHz, voltage controlled oscillator. It can operate at 1.8 V supply and consumes only 1.0 mA current. The tuning bandwidth of the oscillator is 4 GHz with good phase noise performance. | 72 kB | 55 | Rficsolutions Inc. | RJVC02 is 2.0 - 6.0 GHz, voltage controlled |
RGLNA06(2-6 GHz,3.3 V GaAs pHEMT).pdf | 13/02/08 | The RGLNA06 is a broadband high efficiency GaAs Enhancement mode pHEMT Low Noise Amplifier. The MMIC Low Noise Amplifier doesn’t require any off-chip component. The Broadband LNA is designed for the 802.11a/b/g/n system. The LNA covers a wide range o | 54 kB | 78 | Rficsolutions.Inc | RGLNA06 |
RJP05 _2.4GHz_WLAN_PA_.pdf | 12/02/08 | The RJP05 is 2.4 GHz to 2.5 GHz; high efficiency Power stage for WLAN Power Amplifier. The Amplifier is designed using 0.18um SiGe BiCMOS process for 802.11 b/g WLAN systems. Power amplifier shows PAE of 31% at 24 dBm power with output match off-chip | 206 kB | 485 | Rficsolutions Inc. | RJP05 |
RGLNA03(2-12 GHz GaAs pHEMT).pdf | 13/02/08 | The RGLNA03 is 2.0 to 12.0 GHz high efficiency GaAs Enhancement mode p-HEMT Low noise amplifier .The device is designed for 802.11a/b/g standard. The minimum noise figure achieved is 1.5 dB at 2 GHz. A single 3.5V and 12 mA current bias the LNA. No input | 114 kB | 92 | Rficsolutions.Inc | RGLNA03 |
RGPA03(3.4-3.6 GHz GaAs pHEMT).pdf | 13/02/08 | The RGPA03 is a 3.4 to 3.6 GHz high efficiency GaAs Enhancement mode psuedomorphic high electron mobility transistor MMIC Power Amplifier. It has been designed for use in the 3.5 GHz WiMax systems. The part is matched at the input and output so no additi | 154 kB | 109 | Rficsolutions.Inc | RGPA03 |