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High power PNP epitaxial planar bipolar transistor

High breakdown voltage VCEO = -100 V
Complementary to 2STC2510
Typical ft = 20 MHz

Fully characterized at 125 oC
Application 1

Audio power amplifier TO-3P

Figure 1. Internal schematic diagram
The device is a PNP transistor manufactured
using new BiT-LA (Bipolar transistor for linear
amplifier) technology. The resulting transistor
shows good gain linearity behaviour.

Table 1. Device summary
Order code Marking Package Packaging

2STA2510 2STA2510 TO-3P Tube

November 2008 Rev 3 1/8
www.st.com A8
Electrical ratings 2STA2510

1 Electrical ratings

Table 2. Absolute maximum rating
Symbol Parameter Value Unit
VCBO Collector-base voltage (IE = 0) -100 V
VCEO Collector-emitter voltage (IB = 0) -100 V
VEBO Emitter-base voltage (IC = 0) -6 V
IC Collector current -25 A
ICM Collector peak current (tP < 5 ms) -50 A
PTOT Total dissipation at Tc = 25