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2STA2510 High power PNP epitaxial planar bipolar transistor Features High breakdown voltage VCEO = -100 V Complementary to 2STC2510 Typical ft = 20 MHz Fully characterized at 125 oC 3 Application 1 2 Audio power amplifier TO-3P Description Figure 1. Internal schematic diagram The device is a PNP transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Table 1. Device summary Order code Marking Package Packaging 2STA2510 2STA2510 TO-3P Tube November 2008 Rev 3 1/8 www.st.com A8 Electrical ratings 2STA2510 1 Electrical ratings Table 2. Absolute maximum rating Symbol Parameter Value Unit VCBO Collector-base voltage (IE = 0) -100 V VCEO Collector-emitter voltage (IB = 0) -100 V VEBO Emitter-base voltage (IC = 0) -6 V IC Collector current -25 A ICM Collector peak current (tP < 5 ms) -50 A PTOT Total dissipation at Tc = 25