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BD234
SILICON PNP TRANSISTOR
s SGS-THOMSON PREFERRED SALESTYPE
s PNP TRANSISTOR
DESCRIPTION
The BD234 is a silicon epitaxial-base PNP power
transistor in Jedec SOT-32 plastic package
inteded for use in medium power linear and
switching applications.
1
2
3
SOT-32
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V CBO Collector-Base Voltage (I E = 0) -45 V
V CER Collector-Emitter Voltage (R BE = 1K) -45 V
V CEO Collector-Emitter Voltage (I B = 0) -45 V
V EBO Emitter-Base Voltage (I C = 0) -5 V
IC Collector Current -2 A
I CM Collector Peak Current -6 A
P tot Total Dissipation at T c 25 o C 25 W
o
T stg Storage Temperature -65 to 150 C
o
Tj Max. Operating Junction Temperature 150 C
May 1997 1/4
BD234
THERMAL DATA
o
R thj-case Thermal Resistance Junction-case Max 5 C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I CBO Collector Cut-off V CB = -45 V -0.1 mA
o
Current (I E = 0) V CB = -45 V T c = 150 C -2 mA
I EBO Emitter Cut-off Current V EB = -5 V -1 mA
(I C = 0)
V CEO(sus) Collector-Emitter I C = -100 mA -45 V
Sustaining Voltage
V CE(sat) Collector-Emitter I C = -1 A I B = -0.1 A -0.6 V
Saturation Voltage
V BE Base-Emitter Voltage I C = -1 A V CE = -2 V -1.3 V
h FE DC Current Gain I C = -150 mA V CE = -2 V 40
I C = -1 A V CE = -2 V 25
fT Transition frequency I C = -250 mA V CE = -10 V 3 MHz
h FE1 /h FE2 Matched Pairs I C = -150 mA V CE = -2 V 1.6
Pulsed: Pulse duration = 300