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BD234 SILICON PNP TRANSISTOR s SGS-THOMSON PREFERRED SALESTYPE s PNP TRANSISTOR DESCRIPTION The BD234 is a silicon epitaxial-base PNP power transistor in Jedec SOT-32 plastic package inteded for use in medium power linear and switching applications. 1 2 3 SOT-32 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V CBO Collector-Base Voltage (I E = 0) -45 V V CER Collector-Emitter Voltage (R BE = 1K) -45 V V CEO Collector-Emitter Voltage (I B = 0) -45 V V EBO Emitter-Base Voltage (I C = 0) -5 V IC Collector Current -2 A I CM Collector Peak Current -6 A P tot Total Dissipation at T c 25 o C 25 W o T stg Storage Temperature -65 to 150 C o Tj Max. Operating Junction Temperature 150 C May 1997 1/4 BD234 THERMAL DATA o R thj-case Thermal Resistance Junction-case Max 5 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit I CBO Collector Cut-off V CB = -45 V -0.1 mA o Current (I E = 0) V CB = -45 V T c = 150 C -2 mA I EBO Emitter Cut-off Current V EB = -5 V -1 mA (I C = 0) V CEO(sus) Collector-Emitter I C = -100 mA -45 V Sustaining Volt