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SEMICONDUCTOR KTB1124
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
VOLTAGE REGULATORS, RELAY DRIVERS
LAMP DRIVERS, ELECTRICAL EQUIPMENT
FEATURES
Adoption of MBIT processes.
Low collector-to-emitter saturation voltage.
Fast switching speed.
Large current capacity and wide ASO.
Complementary to KTD1624.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO -60 V
Vollector-Emitter Voltage VCEO -50 V
Emitter-Base Voltage VEBO -6 V
Collector Current IC -3 A
Collector Current(Pulse) ICP -6 A
Base Current IB -600 mA
PC 500 mW
Collector Power Dissipation
PC* 1 W
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
2
* : Package mounted on ceramic substrate(250mm 0.8t)
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT.
Collector Cut-off Current ICBO VCB=-40V, IE=0 - - -1
Emitter Cut-off Current IEBO VEB=-4V, IC=0 - - -1
hFE(1) (Note) VCE=-2V, IC=-100 100 - 400
DC Current Gain
hFE (2) VCE=-2V, IC=-3A 35 - -
Collector-Emitter Saturation Voltage VCE(sat) IC=-2A, IB=-100 - -0.35 -0.7 V
Base-Emitter Saturation Voltage VBE(sat) IC=-2A, IB=-100 - -0.94 -1.2 V
Transition Frequency fT VCE=-10V, IC=-50 - 150 -
Collector Output Capacitance Cob VCB=-10V, f=1 - 39 -
Turn-on Time ton - 70 -
Switching
Storage Time tstg - 450 - nS
Time
Fall Time tf - 35 -
Note : hFE (1) Classification A:100 200, B:140 280, C:200 400
2008. 3. 11 Revision No : 4 1/3
KTB1124
2008. 3. 11 Revision No : 4 2/3
KTB1124
2008. 3. 11 Revision No : 4 3/3