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SEMICONDUCTOR KTB1124 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR VOLTAGE REGULATORS, RELAY DRIVERS LAMP DRIVERS, ELECTRICAL EQUIPMENT FEATURES Adoption of MBIT processes. Low collector-to-emitter saturation voltage. Fast switching speed. Large current capacity and wide ASO. Complementary to KTD1624. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO -60 V Vollector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -6 V Collector Current IC -3 A Collector Current(Pulse) ICP -6 A Base Current IB -600 mA PC 500 mW Collector Power Dissipation PC* 1 W Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 2 * : Package mounted on ceramic substrate(250mm 0.8t) ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT. Collector Cut-off Current ICBO VCB=-40V, IE=0 - - -1 Emitter Cut-off Current IEBO VEB=-4V, IC=0 - - -1 hFE(1) (Note) VCE=-2V, IC=-100 100 - 400 DC Current Gain hFE (2) VCE=-2V, IC=-3A 35 - - Collector-Emitter Saturation Voltage VCE(sat) IC=-2A, IB=-100 - -0.35 -0.7 V Base-Emitter Saturation Voltage VBE(sat) IC=-2A, IB=-100 - -0.94 -1.2 V Transition Frequency fT VCE=-10V, IC=-50 - 150 - Collector Output Capacitance Cob VCB=-10V, f=1 - 39 - Turn-on Time ton - 70 - Switching Storage Time tstg