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2SA1201
PNP Silicon
Elektronische Bauelemente Epitaxial Planar Transistor
RoHS Compliant Product
SOT-89
FEATURES E C B
High voltage
High transition frequency
Complementary to 2SC2881
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage -120 V
VCEO Collector-Emitter Voltage -120 V
Millimeter Millimeter
VEBO -5 REF. REF.
Emitter-Base Voltage V Min. Max. Min. Max.
A 4.4 4.6 G 3.00 REF.
IC Collector Current -Continuous -0.8 A B 4.05 4.25 H 1.50 REF.
PC Collector Power Dissipation 0.5 W C 1.50 1.70 I 0.40 0.52
D 1.30 1.50 J 1.40 1.60
TJ Junction Temperature 150 E 2.40 2.60 K 0.35 0.41
F 0.89 1.20 L 5 q TYP.
Tstg Storage Temperature -55-150
M 0.70 REF.
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=-1mA,IE=0 -120 V
Collector-emitter breakdown voltage V(BR)CEO IC=-10mA,IB=0 -120 V
Emitter-base breakdown voltage V(BR)EBO IE=-1mA,IC=0 -5 V
Collector cut-off current ICBO VCB=-120V,IE=0 -0.1 A
Emitter cut-off current IEBO VEB=-5V,IC=0 -0.1 A
DC current gain hFE VCE=-5V,IC=-100mA 80 240
Collector-emitter saturation voltage VCE(sat) IC=-500mA,IB=-50mA -1 V
Base-emitter voltage VBE VCE=-5V,IC=-500mA -1 V
Transition frequency fT VCE=-5V,IC=-100mA 120 MHz
Collector output capacitance Cob VCB=-10V,IE=0,f=1MHz 30 pF
CLASSIFICATION OF hFE
Rank O Y
Range 80-160 120-240
Marking DO DY
http://www.SeCoSGmbH.com Any changing of specification will not be informed individual
08-May-2007 Rev. A Page 1 of 2
2SA1201
PNP Silicon
Elektronische Bauelemente Epitaxial Planar Transistor
Typical Characteristics
http://www.SeCoSGmbH.com Any changing of specification will not be informed individual
08-May-2007 Rev. A Page 2 of 2