Secos 2sa1201 free download

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2SA1201 PNP Silicon Elektronische Bauelemente Epitaxial Planar Transistor RoHS Compliant Product SOT-89 FEATURES E C B High voltage High transition frequency Complementary to 2SC2881 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V Millimeter Millimeter VEBO -5 REF. REF. Emitter-Base Voltage V Min. Max. Min. Max. A 4.4 4.6 G 3.00 REF. IC Collector Current -Continuous -0.8 A B 4.05 4.25 H 1.50 REF. PC Collector Power Dissipation 0.5 W C 1.50 1.70 I 0.40 0.52 D 1.30 1.50 J 1.40 1.60 TJ Junction Temperature 150 E 2.40 2.60 K 0.35 0.41 F 0.89 1.20 L 5 q TYP. Tstg Storage Temperature -55-150 M 0.70 REF. ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-1mA,IE=0 -120 V Collector-emitter breakdown voltage V(BR)CEO IC=-10mA,IB=0 -120