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STP30NM30N
N-channel 300V - 0.078 - 30A - TO-220
Ultra low gate charge MDmeshTM II Power MOSFET
Features
Type VDSS RDS(on) ID
STP30NM30N 300V <0.090 30A
Worldwide lowest gate charge
High dv/dt avalanche capabilities
3
2
Low input capacitance 1
Low gate resistance TO-220
Description
This 300V Power MOSFET with a new advanced
layout brings all unique advantages of MDmeshTM
technology to medium voltages. The device
exhibits worldwide lowest gate charge for any Internal schematic diagram
given on-resistance. Its use is therefore ideal as
primary side switch for DC-DC converters as well
as for switch mode power supply allowing higher
efficiencies and system miniaturization.
Application
Switching application
Order code
Part number Marking Package Packaging
STP30NM30N P30NM30N TO-220 Tube
April 2007 Rev 1 1/12
www.st.com 12
Contents STP30NM30N
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................. 5
3 Test circuits .............................................. 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12
STP30NM30N Electrical ratings
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage (VGS = 0) 300 V
VGS Gate- source voltage