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STP30NM30N N-channel 300V - 0.078 - 30A - TO-220 Ultra low gate charge MDmeshTM II Power MOSFET Features Type VDSS RDS(on) ID STP30NM30N 300V <0.090 30A Worldwide lowest gate charge High dv/dt avalanche capabilities 3 2 Low input capacitance 1 Low gate resistance TO-220 Description This 300V Power MOSFET with a new advanced layout brings all unique advantages of MDmeshTM technology to medium voltages. The device exhibits worldwide lowest gate charge for any Internal schematic diagram given on-resistance. Its use is therefore ideal as primary side switch for DC-DC converters as well as for switch mode power supply allowing higher efficiencies and system miniaturization. Application Switching application Order code Part number Marking Package Packaging STP30NM30N P30NM30N TO-220 Tube April 2007 Rev 1 1/12 www.st.com 12 Contents STP30NM30N Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ... 5 3 Test circuits ... 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 STP30NM30N Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 300 V VGS Gate- source voltage