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2STR1160
Low voltage fast-switching NPN power transistor
Features
Very low collector-emitter saturation voltage
High current gain characteristic
Fast switching speed
Miniature SOT-23 plastic package for surface
mounting circuits
Description SOT-23
The device in a NPN transistor manufactured
using new "PB-HCD" (Power Bipolar High Current
Density) technology. The resulting transistor
shows exceptional high gain performances
coupled with very low saturation voltage.
Figure 1. Internal schematic diagram
The complementary PNP is the 2STR2160.
Applications
LED
Battery charger
Motor and relay driver
Voltage regulation
Table 1. Device summary
Order code Marking Package Packing
2STR1160 160 SOT-23 Tape and reel
February 2008 Rev 1 1/11
www.st.com 11
Content 2STR1160
Content
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Typical characteristic (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
4 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
2/11
2STR1160 Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum rating
Symbol Parameter Value Unit
VCBO Collector-base voltage (IE = 0) 60 V
VCEO Collector-emitter voltage (IB = 0) 60 V
VEBO Emitter-base voltage (IC = 0) 5 V
IC Collector current 1 A
ICM Collector peak current (tP < 5ms) 2 A
Ptot Total dissipation at Tamb = 25