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2STR1160 Low voltage fast-switching NPN power transistor Features Very low collector-emitter saturation voltage High current gain characteristic Fast switching speed Miniature SOT-23 plastic package for surface mounting circuits Description SOT-23 The device in a NPN transistor manufactured using new "PB-HCD" (Power Bipolar High Current Density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage. Figure 1. Internal schematic diagram The complementary PNP is the 2STR2160. Applications LED Battery charger Motor and relay driver Voltage regulation Table 1. Device summary Order code Marking Package Packing 2STR1160 160 SOT-23 Tape and reel February 2008 Rev 1 1/11 www.st.com 11 Content 2STR1160 Content 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Typical characteristic (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 4 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 2/11 2STR1160 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum rating Symbol Parameter Value Unit VCBO Collector-base voltage (IE = 0) 60 V VCEO Collector-emitter voltage (IB = 0) 60 V VEBO Emitter-base voltage (IC = 0) 5 V IC Collector current 1 A ICM Collector peak current (tP < 5ms) 2 A Ptot Total dissipation at Tamb = 25