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STY80NM60N
N-channel 600 V, 0.030 74 A, MDmeshTM II Power MOSFET
,
Max247
Features
VDSS @
Type RDS(on) max ID
TJmax
STY80NM60N 650 V < 0.035 74 A
The worldwide best RDS(on) in Max247
3
2
100% avalanche tested 1
Low input capacitance and gate charge
Max247
Low gate input resistance
Application
Switching applications
Description Figure 1. Internal schematic diagram
This series of devices implements second
generation MDmeshTM technology. This
revolutionary Power MOSFET associates a new
vertical structure to the Company's strip layout to
yield one of the world's lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
Table 1. Device summary
Order code Marking Package Packaging
STY80NM60N 80NM60N Max247 Tube
February 2009 Rev 5 1/12
www.st.com 12
Contents STY80NM60N
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) .......................... 6
3 Test circuits .............................................. 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2/12
STY80NM60N Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage (VGS = 0) 600 V
VGS Gate- source voltage