ST sty80nm60n free download

File name sty80nm60n.pdf

STY80NM60N N-channel 600 V, 0.030 74 A, MDmeshTM II Power MOSFET , Max247 Features VDSS @ Type RDS(on) max ID TJmax STY80NM60N 650 V < 0.035 74 A The worldwide best RDS(on) in Max247 3 2 100% avalanche tested 1 Low input capacitance and gate charge Max247 Low gate input resistance Application Switching applications Description Figure 1. Internal schematic diagram This series of devices implements second generation MDmeshTM technology. This revolutionary Power MOSFET associates a new vertical structure to the Company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Table 1. Device summary Order code Marking Package Packaging STY80NM60N 80NM60N Max247 Tube February 2009 Rev 5 1/12 www.st.com 12 Contents STY80NM60N Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ... 6 3 Test circuits ... 9 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/12 STY80NM60N Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 600 V VGS Gate- source voltage