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BUX80
HIGH VOLTAGE NPN SILICON POWER TRANSISTOR
s SGS-THOMSON PREFERRED SALESTYPE
s NPN TRANSISTOR
s FAST SWITCHING SPEED
APPLICATIONS
s SWITCHING REGULATORS
s MOTOR CONTROL
s HIGH FREQUENCY AND EFFICENCY
CONVERTERS
1
2
DESCRIPTION
The BUX80 is a silicon multiepitaxial mesa NPN TO-3
transistor in Jedec TO-3 metal case, particularly
intended for converters, inverters, switching
regulators and motors control system
applications.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V CES Collector-emitter Voltage (V BE = 0) 800 V
V CER Collector-emitter Voltage (R BE = 50) 500 V
V CEO Collector-emitter Voltage (I B = 0) 400 V
V EBO Emitter-base Voltage (Ic = 0) 10 V
IC Collector Current 10 A
I CM Collector Peak Current 15 A
IB Base Current 5 A
P tot Total Power Dissipation at T case 40 C
o
100 W
o
T stg Storage Temperature -65 to 150 C
o
Tj Max Operating Junction Temperature 150 C
June 1997 1/4
BUX80
THERMAL DATA
o
R thj-case Thermal Resistance Junction-case Max 1.1 C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I CES Collector Cut-off V CE = 800 V 1 mA
o
Current (V BE = 0) V CE = 800 V T case = 125 C 3 mA
I EBO Emitter Cut-off Current V BE = 10 V 10 mA
(I C = 0)
V CEO(sus) Collector-Emitter I C = 100 mA 400 V
SustainingVoltage
(I B = 0)
V CER(sus) Collector-Emitter I C = 100 mA 500 V
Sustaining
Voltage (R BE = 50 )
V CE(sat) Collector-Emitter IC = 5 A IB = 1 A 1.5 V
Saturation Voltage IC = 8 A I B = 2.5 A 3 V
V BE(sat) Base-Emitter IC = 5 A IB = 1 A 1.4 V
Saturation Voltage IC = 8 A I B = 2.5 A 1.8 V
h FE DC Current Gain I C = 1.2 A V CE = 5 V 30
t on Turn-on Time IC = 5 A I B1 = 1 A 0.5