ST bux80- free download

File name bux80-.pdf

BUX80 HIGH VOLTAGE NPN SILICON POWER TRANSISTOR s SGS-THOMSON PREFERRED SALESTYPE s NPN TRANSISTOR s FAST SWITCHING SPEED APPLICATIONS s SWITCHING REGULATORS s MOTOR CONTROL s HIGH FREQUENCY AND EFFICENCY CONVERTERS 1 2 DESCRIPTION The BUX80 is a silicon multiepitaxial mesa NPN TO-3 transistor in Jedec TO-3 metal case, particularly intended for converters, inverters, switching regulators and motors control system applications. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V CES Collector-emitter Voltage (V BE = 0) 800 V V CER Collector-emitter Voltage (R BE = 50) 500 V V CEO Collector-emitter Voltage (I B = 0) 400 V V EBO Emitter-base Voltage (Ic = 0) 10 V IC Collector Current 10 A I CM Collector Peak Current 15 A IB Base Current 5 A P tot Total Power Dissipation at T case 40 C o 100 W o T stg Storage Temperature -65 to 150 C o Tj Max Operating Junction Temperature 150 C June 1997 1/4 BUX80 THERMAL DATA o R thj-case Thermal Resistance Junction-case Max 1.1 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit I CES Collector Cut-off V CE = 800 V 1 mA o Current (V BE = 0) V CE = 800 V T case = 125 C 3 mA I EBO Emitter Cut-off Current V BE = 10 V