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2ST2121
High power PNP epitaxial planar bipolar transistor
Features
High breakdown voltage VCEO = -250 V
Complementary to 2ST5949
Typical ft = 25 MHz
Fully characterized at 125 oC
Applications 1
Audio power amplifier 2
TO-3
Description
The device is a PNP transistor manufactured Figure 1. Internal schematic diagram
using new BiT-LA (Bipolar transistor for linear
amplifier) technology. The resulting transistor
shows good gain linearity behaviour.
Table 1. Device summary
Order code Marking Package Packaging
2ST2121 2ST2121 TO-3 tray
November 2008 Rev 5 1/8
www.st.com 8
Absolute maximun rating 2ST2121
1 Absolute maximun rating
Table 2. Absolute maximum rating
Symbol Parameter Value Unit
VCBO Collector-base voltage (IE = 0) -250 V
VCEO Collector-emitter voltage (IB = 0) -250 V
VEBO Emitter-base voltage (IC = 0) -6 V
IC Collector current -17 A
ICM Collector peak current (tP < 5 ms) -34 A
PTOT Total dissipation at Tc = 25