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2ST2121 High power PNP epitaxial planar bipolar transistor Features High breakdown voltage VCEO = -250 V Complementary to 2ST5949 Typical ft = 25 MHz Fully characterized at 125 oC Applications 1 Audio power amplifier 2 TO-3 Description The device is a PNP transistor manufactured Figure 1. Internal schematic diagram using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Table 1. Device summary Order code Marking Package Packaging 2ST2121 2ST2121 TO-3 tray November 2008 Rev 5 1/8 www.st.com 8 Absolute maximun rating 2ST2121 1 Absolute maximun rating Table 2. Absolute maximum rating Symbol Parameter Value Unit VCBO Collector-base voltage (IE = 0) -250 V VCEO Collector-emitter voltage (IB = 0) -250 V VEBO Emitter-base voltage (IC = 0) -6 V IC Collector current -17 A ICM Collector peak current (tP < 5 ms) -34 A PTOT Total dissipation at Tc = 25