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KSH45H11 PNP EPITAXIAL SILICON TRANSISTOR
GENERAL PURPOSE POWER AND SWITCHING
SUCH AS OUTPUT OR DRIVER STAGES IN D-PAK
APPLICATIONS D-PACK FOR SURFACE
MOUNT APPLICATIONS
z Load Formed for Surface Mount Application(No Suffix)
z Straight Lead (I.PACK,"- I Suffix) 1
z Electrically Similar to Popular KSE45H
z Fast Switching Speeds
z Low Collector Emitter Saturation Voltage 1. Base 2. Collector 3. Emitter
ABSOLUTE MAXIMUM RATINGS I-PAK
Characteristic Symbol Rating Unit
Collector Emitter Voltage VCEO - 80 V
Emitter Base Voltage VEBO -5 V
Collector Current (DC) IC -8 A
Collector Current (Pulse) IC - 16 A 1
&)
Collector Dissipation ( T C=25 PC 20 W
Collector Dissipation (T =25&) PC 1.75 W
&
A
1. Base 2. Collector 3. Emitter
Junction Temperature TJ 150
Storage Temperature T STG -55 ~ 150 &
ELECTRICAL CHARACTERISTICS (Tc =25&)
Characteristic Symbol Test Conditions Min Typ Max Unit
Collector Emitter Sustaining Voltage VCEO (sus) IC = - 30mA, IB = 0 - 80 V
Collector Cutoff Current ICEO VCE = - 80V, IB = 0 - 10 uA
Emitter Cutoff Current IEBO VBE = - 5V, IC = 0 - 50 uA
DC Current Gain hFE VCE = - 1V, IC = - 2A 60
VCE = - 1V, IC = - 4A 40
Collector Emitter Saturation Voltage VCE(sat) IC = - 8A, IB = - 0.4A -1 V
Base Emitter Saturation Voltage VBE(on) IC = - 8A, IB = - 0.8A - 1.5 V
Current Gain Bandwidth Product fT VCE= - 10A, IC = - 0.5A 40 MHz
f = 20MHz
Collector Capacitance COB VCB = - 10V, f = 1MHz 230 pF
Turn On Time tON IC = - 5A, IB1 = - 0.5A 135 ns
Storage Time tSTG IB1= - IB2 = - 0.5A 500 ns
Fall Time tF 100 ns
% Pulse Test : PW 300uS, Duty Cycle2%
KSH45H11 PNP EPITAXIAL SILICON TRANSISTOR