Samsung ksh45h11 free download

File name ksh45h11.pdf

KSH45H11 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE POWER AND SWITCHING SUCH AS OUTPUT OR DRIVER STAGES IN D-PAK APPLICATIONS D-PACK FOR SURFACE MOUNT APPLICATIONS z Load Formed for Surface Mount Application(No Suffix) z Straight Lead (I.PACK,"- I Suffix) 1 z Electrically Similar to Popular KSE45H z Fast Switching Speeds z Low Collector Emitter Saturation Voltage 1. Base 2. Collector 3. Emitter ABSOLUTE MAXIMUM RATINGS I-PAK Characteristic Symbol Rating Unit Collector Emitter Voltage VCEO - 80 V Emitter Base Voltage VEBO -5 V Collector Current (DC) IC -8 A Collector Current (Pulse) IC - 16 A 1 &) Collector Dissipation ( T C=25 PC 20 W Collector Dissipation (T =25&) PC 1.75 W & A 1. Base 2. Collector 3. Emitter Junction Temperature TJ 150 Storage Temperature T STG -55 ~ 150 & ELECTRICAL CHARACTERISTICS (Tc =25&) Characteristic Symbol Test Conditions Min Typ Max Unit Collector Emitter Sustaining Voltage VCEO (sus) IC = - 30mA, IB = 0 - 80 V Collector Cutoff Current ICEO VCE = - 80V, IB = 0 - 10 uA Emitter Cutoff Current IEBO VBE = - 5V, IC = 0 - 50 uA DC Current Gain hFE VCE = - 1V, IC = - 2A 60 VCE = - 1V, IC = - 4A 40 Collector Emitter Saturation Voltage VCE(sat) IC = - 8A, IB = - 0.4A -1 V Base Emitter Saturation Voltage VBE(on) IC = - 8A, IB = - 0.8A - 1.5 V Current Gain Bandwidth Product fT VCE= - 10A, IC = - 0.5A 40 MHz f = 20MHz