am82731-003.pdf part of ST am82731-003 am82731-003.pdf, . Electronic Components Datasheets Active components Transistors ST am82731-003.pdf text manual preview

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AM82731-003
RF & MICROWAVE TRANSISTORS
S-BAND RADAR APPLICATIONS

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. REFRACTORY/GOLD METALLIZATION

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EMITTER SITE BALLASTED
10:1 VSWR CAPABILITY

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LOW THERMAL RESISTANCE
INPUT/OUTPUT IMPEDANCE MATCHING

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OVERLAY GEOMETRY
METAL/CERAMIC HERMETIC PACKAGE

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.400 x .400 2NLFL (S042)
POUT = 3.0 W. MIN. WITH 5.7 dB GAIN hermetically sealed
BANDWIDTH = 400 MHz ORDER CODE BRANDING
AM 82731-003 82731-3

PIN CONNECTION
DESCRIPTION
The AM82731-003 device is a medium power silicon
bipolar NPN transistor specifically designed for S-
Band radar pulsed driver applications.
This device is capable of operation over a wide range
of pulse widths, duty cycles, and temperatures and
can withstand a 10:1 output VSWR. Low RF thermal
resistance, refractory/gold metallization, and auto-
matic wire bonding techniques ensure high reliability
and product consistency.
The AM82731-003 is supplied in the hermetic met-
al/ceramic package with internal input/output imped- 1. Collector 3. Emitter
ance matching circuitry, and is intended for military 2. Base 4. Base
and other high reliability applications.

ABSOLUTE MAXIMUM RATINGS (T case = 25