ST am82731-003 free download

File name am82731-003.pdf

AM82731-003 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS . . REFRACTORY/GOLD METALLIZATION . . EMITTER SITE BALLASTED 10:1 VSWR CAPABILITY . . LOW THERMAL RESISTANCE INPUT/OUTPUT IMPEDANCE MATCHING . . OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE . .400 x .400 2NLFL (S042) POUT = 3.0 W. MIN. WITH 5.7 dB GAIN hermetically sealed BANDWIDTH = 400 MHz ORDER CODE BRANDING AM 82731-003 82731-3 PIN CONNECTION DESCRIPTION The AM82731-003 device is a medium power silicon bipolar NPN transistor specifically designed for S- Band radar pulsed driver applications. This device is capable of operation over a wide range of pulse widths, duty cycles, and temperatures and can withstand a 10:1 output VSWR. Low RF thermal resistance, refractory/gold metallization, and auto- matic wire bonding techniques ensure high reliability and product consistency. The AM82731-003 is supplied in the hermetic met- al/ceramic package with internal input/output imped- 1. Collector 3. Emitter ance matching circuitry, and is intended for military 2. Base 4. Base and other high reliability applications. ABSOLUTE MAXIMUM RATINGS (T case = 25