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BDX87C
BDX88C
COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS
s SGS-THOMSON PREFERRED SALESTYPES
DESCRIPTION
The BDX87C is a silicon epitaxial-base NPN
power transistors in monolithic Darlington
configuration and are mounted in Jedec TO-3
metal case. They are intented for use in power
linear and switching applications.
1
The complementary PNP types is the BDX88C.
2
TO-3
INTERNAL SCHEMATIC DIAGRAM
R1 Typ. = 6 K R2 Typ. = 55
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
NPN BDX87C
PNP BDX88C
V CBO Collector-base Voltage (I E = 0) 100 V
V CEO Collector-emitter Voltage (I B = 0) 100 V
V EBO Emitter-base Voltage (I C = 0) 5 V
IC Collector Current 12 A
I CM Collector Peak Current (repetitive) 18 A
IB Base Current 0.2 A
P tot Total Dissipation at T c 25 C
o
120 W
o
T stg Storage Temperature -65 to 200 C
o
Tj Max. Operating Junction Temperature 200 C
June 1997 1/4
BDX87C-BDX88C
THERMAL DATA
o
R thj-case Thermal Resistance Junction-case Max 1.45 C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I CBO Collector Cut-off V CB = 100 V 0.5 mA
Current (I E = 0) V CB = 100 V T case = 150 o C 5 mA
I CEO Collector Cut-off V CB = 50 V 1 mA
Current (I B = 0)
I EBO Emitter Cut-off Current V EB = 5 V 1 mA
(I C = 0)
V CEO(sus) Collector-Emitter I C = 100 mA 100 V
Sustaining Voltage
(I B = 0)
V CE(sat) Collector-emitter IC = 6 A I B = 24 mA 2 V
Saturation Voltage I C = 12 A I B = 120 mA 3 V
V BE(sat) Base-emitter I C = 12 A I B =120 mA 4 V
Saturation Voltage
V BE Base-emitter Voltage IC = 6 A V CE = 3 V 2.8 V
h FE DC Current Gain IC = 5 A V CE = 3 V 1000
IC = 6 A V CE = 3 V 750 18000
I C = 12 A V CE = 3 V 100
VF Parallel-diode Forward IF = 3 A 1.8 V
Voltage IF = 8 A 2.5 V
hfe Small SignalCurrent IC = 5 A V CE = 3 V 25
Gain f = 1MHz
Pulsed: Pulse duration = 300