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BDX87C BDX88C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS s SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BDX87C is a silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are mounted in Jedec TO-3 metal case. They are intented for use in power linear and switching applications. 1 The complementary PNP types is the BDX88C. 2 TO-3 INTERNAL SCHEMATIC DIAGRAM R1 Typ. = 6 K R2 Typ. = 55 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit NPN BDX87C PNP BDX88C V CBO Collector-base Voltage (I E = 0) 100 V V CEO Collector-emitter Voltage (I B = 0) 100 V V EBO Emitter-base Voltage (I C = 0) 5 V IC Collector Current 12 A I CM Collector Peak Current (repetitive) 18 A IB Base Current 0.2 A P tot Total Dissipation at T c 25 C o 120 W o T stg Storage Temperature -65 to 200 C o Tj Max. Operating Junction Temperature 200 C June 1997 1/4 BDX87C-BDX88C THERMAL DATA o R thj-case Thermal Resistance Junction-case Max 1.45 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter