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Midium Power Transistors (80V / 0.7A)
2SCR514R
Features Dimensions (Unit : mm)
1) Low saturation voltage, typically TSMT3
V CE (sat) = 0.3V (Max.) (I C / I B= 300mA / 15mA)
2) High speed switching
(3)
Structure
NPN Silicon epitaxial planar transistor
(1) (2)
(1) Base
Applications (2) Emittrer
Driver (3) Collector Abbreviated symbol : ND
Packaging specifications Inner circuit
Package TSMT3 (3)
Type Code TL
Basic ordering unit (pieces) 3000
(1)
Absolute maximum ratings (Ta = 25C) (1) Base
(2) Emittrer
Parameter Symbol Limits Unit (3) Collector (2)
Collector-base voltage VCBO 80 V
Collector-emitter voltage VCEO 80 V
Emitter-base voltage VEBO 6 V
DC IC 0.7 A
Collector current
Pulsed ICP*1 1.4 A
PD*2 0.5 W
Power dissipation
PD*3 1.0 W
Junction temperature Tj 150 C
Range of storage temperature Tstg -55 to 150 C
*1 Pw=10ms, Single Pulse
*2 Mounted on a recommended land.
*3 Mounted on a 40 x 40 x 0.7[mm3] ceramic substrate.
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