Rohm 2scr514r free download

File name 2scr514r.pdf

Midium Power Transistors (80V / 0.7A) 2SCR514R Features Dimensions (Unit : mm) 1) Low saturation voltage, typically TSMT3 V CE (sat) = 0.3V (Max.) (I C / I B= 300mA / 15mA) 2) High speed switching (3) Structure NPN Silicon epitaxial planar transistor (1) (2) (1) Base Applications (2) Emittrer Driver (3) Collector Abbreviated symbol : ND Packaging specifications Inner circuit Package TSMT3 (3) Type Code TL Basic ordering unit (pieces) 3000 (1) Absolute maximum ratings (Ta = 25C) (1) Base (2) Emittrer Parameter Symbol Limits Unit (3) Collector (2) Collector-base voltage VCBO 80 V Collector-emitter voltage VCEO 80 V Emitter-base voltage VEBO 6 V DC IC 0.7 A Collector current Pulsed ICP*1 1.4 A PD*2 0.5 W Power dissipation PD*3 1.0 W Junction temperature Tj 150 C Range of storage temperature Tstg -55 to 150 C *1 Pw=10ms, Single Pulse *2 Mounted on a recommended land. *3 Mounted on a 40 x 40 x 0.7[mm3] ceramic substrate. www.rohm.com