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AM1214-325
RF & MICROWAVE TRANSISTORS
L-BAND RADAR APPLICATIONS
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. REFRACTORY/GOLD METALLIZATION

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EMITTER SITE BALLASTED
5:1 VSWR CAPABILITY

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.
LOW THERMAL RESISTANCE
INPUT/OUTPUT MATCHING

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OVERLAY GEOMETRY
METAL/CERAMIC HERMETIC PACKAGE
POUT = 325 W MIN. WITH 6.4 dB GAIN
.400 x .500 2LFL (S038)
hermetically sealed

ORDER CODE BRANDING
AM1214-325 1214-325




PIN CONNECTION
DESCRIPTION
The AM1214-325 device is a high power transistor
specifically designed for L-Band radar pulsed out-
put and driver applications.
This device is designed for operation under moder-
ate pulse width and duty cycle pulse conditions
and is capable of withstanding 5:1 VSWR at rated
RF conditions. Low RF thermal resistance and
computerized automatic wire bonding techniques
ensure high reliability and product consistency.
The AM1214-325 is supplied in the BIGPACTM Her- 1. Collector 3. Emitter
metic M etal/Ceramic package with i nternal 2. Base 4. Base
Input/Output matching structures.

ABSOLUTE MAXIMUM RATINGS (T case = 25