ST am1214,325 free download

File name am1214,325.pdf

AM1214-325 RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS . . REFRACTORY/GOLD METALLIZATION . . EMITTER SITE BALLASTED 5:1 VSWR CAPABILITY . . LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING . . OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 325 W MIN. WITH 6.4 dB GAIN .400 x .500 2LFL (S038) hermetically sealed ORDER CODE BRANDING AM1214-325 1214-325 PIN CONNECTION DESCRIPTION The AM1214-325 device is a high power transistor specifically designed for L-Band radar pulsed out- put and driver applications. This device is designed for operation under moder- ate pulse width and duty cycle pulse conditions and is capable of withstanding 5:1 VSWR at rated RF conditions. Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency. The AM1214-325 is supplied in the BIGPACTM Her- 1. Collector 3. Emitter metic M etal/Ceramic package with i nternal 2. Base 4. Base Input/Output matching structures. ABSOLUTE MAXIMUM RATINGS (T case = 25