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STW55NM60ND
N-channel 600 V - 0.047 - 51 A TO-247
FDmeshTM II Power MOSFET (with fast diode)
Features
VDSS RDS(on)
Type ID
(@TJmax) (max)
STW55NM60ND 650 V < 0.060 51 A
The worldwide best RDS(on) amongst the fast
recovery diode devices in TO-247 3
2
100% avalanche tested 1
Low input capacitance and gate charge TO-247
Low gate input resistance
High dv/dt and avalanche capabilities
Application
Switching applications Figure 1. Internal schematic diagram
Description
The FDmeshTM II series belongs to the second
generation of MDmeshTM technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company's strip layout
and associates all advantages of reduced on-
resistance and fast switching with an intrinsic fast-
recovery body diode.It is therefore strongly
recommended for bridge topologies, in particular
ZVS phase-shift converters.
Table 1. Device summary
Order code Marking Package Packaging
STW55NM60ND 55NM60ND TO-247 Tube
April 2008 Rev 2 1/12
www.st.com 12
Contents STW55NM60ND
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................. 6
3 Test circuits .............................................. 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12
STW55NM60ND Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage (VGS = 0) 600 V
VGS Gate- source voltage