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STW55NM60ND N-channel 600 V - 0.047 - 51 A TO-247 FDmeshTM II Power MOSFET (with fast diode) Features VDSS RDS(on) Type ID (@TJmax) (max) STW55NM60ND 650 V < 0.060 51 A The worldwide best RDS(on) amongst the fast recovery diode devices in TO-247 3 2 100% avalanche tested 1 Low input capacitance and gate charge TO-247 Low gate input resistance High dv/dt and avalanche capabilities Application Switching applications Figure 1. Internal schematic diagram Description The FDmeshTM II series belongs to the second generation of MDmeshTM technology. This revolutionary Power MOSFET associates a new vertical structure to the company's strip layout and associates all advantages of reduced on- resistance and fast switching with an intrinsic fast- recovery body diode.It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. Table 1. Device summary Order code Marking Package Packaging STW55NM60ND 55NM60ND TO-247 Tube April 2008 Rev 2 1/12 www.st.com 12 Contents STW55NM60ND Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ... 6 3 Test circuits ... 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 STW55NM60ND Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0)