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stw55nm60nd.pdfSTW55NM60ND N-channel 600 V - 0.047 - 51 A TO-247 FDmeshTM II Power MOSFET (with fast diode) Features VDSS RDS(on) Type ID (@TJmax) (max) STW55NM60ND 650 V < 0.060 51 A The worldwide best RDS(on) amongst the fast recovery diode devices in TO-247 3 2 100% avalanche tested 1 Low input capacitance and gate charge TO-247 Low gate input resistance High dv/dt and avalanche capabilities Application Switching applications Figure 1. Internal schematic diagram Description The FDmeshTM II series be

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