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STB80NF55-06
STP80NF55-06 STP80NF55-06FP
N-CHANNEL 55V - 0.005 - 80A TO-220/TO-220FP/D2PAK
STripFETTM II POWER MOSFET
TYPE VDSS RDS(on) ID
STB80NF55-06 55 V <0.0065 80 A
STP80NF55-06 55 V <0.0065 80 A
STP80NF55-06FP 55 V <0.0065 60 A
s TYPICAL RDS(on) = 0.005 3
3 1
s EXCEPTIONAL dv/dt CAPABILITY 1
2
s 100% AVALANCHE TESTED D2PAK
TO-220FP TO-263
s APPLICATION ORIENTED
CHARACTERIZATION (Suffix "T4")
s SURFACE-MOUNTING D2PAK (TO-263)
3
POWER PACKAGE IN TUBE (NO SUFFIX) OR 1
2
IN TAPE & REEL (SUFFIX "T4")
TO-220
DESCRIPTION
This Power MOSFET is the latest development of INTERNAL SCHEMATIC DIAGRAM
STMicroelectronis unique "Single Feature SizeTM"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s HIGH-EFFICIENCY DC-DC CONVERTERS
s UPS AND MOTOR CONTROL
s DC-DC CONVERTERS
s AUTOMOTIVE ENVIRONMENT
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STB80NF55-06
STP80NF55-06FP
STP80NF55-06
VDS Drain-source Voltage (VGS = 0) 55 V
VDGR Drain-gate Voltage (RGS = 20 k) 55 V
VGS Gate- source Voltage