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STB80NF55-06 STP80NF55-06 STP80NF55-06FP N-CHANNEL 55V - 0.005 - 80A TO-220/TO-220FP/D2PAK STripFETTM II POWER MOSFET TYPE VDSS RDS(on) ID STB80NF55-06 55 V <0.0065 80 A STP80NF55-06 55 V <0.0065 80 A STP80NF55-06FP 55 V <0.0065 60 A s TYPICAL RDS(on) = 0.005 3 3 1 s EXCEPTIONAL dv/dt CAPABILITY 1 2 s 100% AVALANCHE TESTED D2PAK TO-220FP TO-263 s APPLICATION ORIENTED CHARACTERIZATION (Suffix "T4") s SURFACE-MOUNTING D2PAK (TO-263) 3 POWER PACKAGE IN TUBE (NO SUFFIX) OR 1 2 IN TAPE & REEL (SUFFIX "T4") TO-220 DESCRIPTION This Power MOSFET is the latest development of INTERNAL SCHEMATIC DIAGRAM STMicroelectronis unique "Single Feature SizeTM" strip-based process. The resulting transistor shows extremely high packing density for low on- resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark- able manufacturing reproducibility. APPLICATIONS s HIGH-EFFICIENCY DC-DC CONVERTERS s UPS AND MOTOR CONTROL s DC-DC CONVERTERS s AUTOMOTIVE ENVIRONMENT ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit STB80NF55-06 STP80NF55-06FP STP80NF55-06 VDS Drain-source Voltage (VGS = 0) 55 V VDGR Drain-gate Voltage (RGS = 20 k) 55 V VGS Gate- source Voltage