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CES2309
P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY
FEATURES
-20V, -2.2A, RDS(ON) = 165m @VGS = -4.5V.
RDS(ON) = 300m @VGS = -2.5V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
D
Lead free product is acquired.
SOT-23 package.
G
D
S
G
SOT-23 S
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter Symbol Limit Units
Drain-Source Voltage VDS -20 V
Gate-Source Voltage VGS