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Descr: . Electronic Components Datasheets Active components Transistors CET ces2309.pdf
Group:Electronics > Components > Transistors
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CES2309 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -20V, -2.2A, RDS(ON) = 165m @VGS = -4.5V. RDS(ON) = 300m @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D Lead free product is acquired. SOT-23 package. G D S G SOT-23 S ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS

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