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STW11NK90Z
N-channel 900V - 0.82 - 9.2A - TO-247
Zener-protected SuperMESHTM Power MOSFET
General features
Type VDSS RDS(on) ID Pw
STW11NK90Z 900V <0.98 9.2A 200W
100% avalanche tested
Extremely high dv/dt capability
Gate charge minimized
Very low intrinsic capacitances TO-247
Very good manufacturing repeability
Description
The SuperMESHTM series is obtained through an
extreme optimization of ST's well established
strip-based PowerMESHTM layout. In addition to
Internal schematic diagram
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Such series complements ST full range of high
voltage Power MOSFETs including revolutionary
MDmeshTM products
Applications
Switching application
Order codes
Part number Marking Package Packaging
STW11NK90Z W11NK90Z TO-247 Tube
July 2006 Rev 2 1/12
www.st.com 12
Contents STW11NK90Z
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................ 5
3 Test circuits .............................................. 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12
STW11NK90Z Electrical ratings
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage (VGS = 0) 900 V
VDGR Drain-gate voltage (RGS = 20K) 900 V
VGS Gate-source voltage