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Descr: . Electronic Components Datasheets Active components Transistors ST stw11nk90z.pdf
Group:Electronics > Components > Transistors
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STW11NK90Z N-channel 900V - 0.82 - 9.2A - TO-247 Zener-protected SuperMESHTM Power MOSFET General features Type VDSS RDS(on) ID Pw STW11NK90Z 900V <0.98 9.2A 200W 100% avalanche tested Extremely high dv/dt capability Gate charge minimized Very low intrinsic capacitances TO-247 Very good manufacturing repeability Description The SuperMESHTM series is obtained through an extreme optimization of ST's well established strip-based PowerMESHTM layout. In addition to Internal schematic diagram pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage Power MOSFETs including revolutionary MDmeshTM products Applications Switching application Order codes Part number Marking Package Packaging STW11NK90Z W11NK90Z TO-247 Tube July 2006 Rev 2 1/12 www.st.com 12 Contents STW11NK90Z Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ... 5 3 Test circuits ... 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 STW11NK90Z Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 900 V VDGR Drain-gate voltage (RGS = 20K) 900 V VGS Gate-source voltage

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