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PBSS301ND
20 V, 4 A NPN low VCEsat (BISS) transistor
Rev. 03 -- 7 September 2007 Product data sheet




1. Product profile

1.1 General description
NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT457 (SC-74)
Surface-Mounted Device (SMD) plastic package.

PNP complement: PBSS301PD.

1.2 Features
I Very low collector-emitter saturation resistance
I Ultra low collector-emitter saturation voltage
I 4 A continuous collector current
I Up to 15 A peak current
I High efficiency due to less heat generation

1.3 Applications
I Power management functions
I Charging circuits
I DC-to-DC conversion
I MOSFET gate driving
I Power switches (e.g. motors, fans)
I Thin Film Transistor (TFT) backlight inverter

1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VCEO collector-emitter voltage open base - - 20 V
IC collector current [1] - - 4 A
ICM peak collector current single pulse; - - 15 A
tp 1 ms
RCEsat collector-emitter saturation IC = 4 A; [2] - 50 70 m
resistance IB = 400 mA

[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.
[2] Pulse test: tp 300