Philips pbss301nd free download

File name pbss301nd.pdf

PBSS301ND 20 V, 4 A NPN low VCEsat (BISS) transistor Rev. 03 -- 7 September 2007 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS301PD. 1.2 Features I Very low collector-emitter saturation resistance I Ultra low collector-emitter saturation voltage I 4 A continuous collector current I Up to 15 A peak current I High efficiency due to less heat generation 1.3 Applications I Power management functions I Charging circuits I DC-to-DC conversion I MOSFET gate driving I Power switches (e.g. motors, fans) I Thin Film Transistor (TFT) backlight inverter 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - 20 V IC collector current [1] - - 4 A ICM peak collector current single pulse; - - 15 A tp 1 ms RCEsat collector-emitter saturation IC = 4 A; [2] - 50 70 m resistance IB = 400 mA [1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint. [2] Pulse test: tp 300