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Si6820DQ
Vishay Siliconix
N-Channel, Reduced Qg, MOSFET with Schottky Diode
MOSFET PRODUCT SUMMARY
VDS (V) rDS(on) (W) ID (A)
0.160 @ VGS = 4.5 V "1.9
20
0.260 @ VGS = 3.0 V "1.5
SCHOTTKY PRODUCT SUMMARY
VF (v)
VKA (V) Diode Forward Voltage IF (A)
20 0.5 V @ 1 A 1.5
D K
TSSOP-8
D 1 D 8 K G
S 2 Si6820DQ 7 A
S 3 6 A
G 4 5 A
S A
Top View
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage (MOSFET) VDS 20
Reverse Voltage (Schottky) VKA 20 V
Gate-Source Voltage (MOSFET) VGS "12
TA = 25_C "1.9
Continuous Drain Current (TJ = 150_C) (MOSFET)a, b
150 C) ID
TA = 70_C "1.5
Pulsed Drain Current (MOSFET) IDM "8
A
Continuous Source Current (MOSFET Diode Conduction)a, b IS 1.0
Average Foward Current (Schottky) IF 1.5
Pulsed Foward Current (Schottky) IFM 30
TA = 25_C 1.2
Maximum Power Dissipation (MOSFET)a, b
TA = 70_C 0.76
PD W
TA = 25_C 1.0
Maximum Power Dissipation (Schottky)a, b
TA = 70_C 0.64
Operating Junction and Storage Temperature Range TJ, Tstg