Vishay si6820dq free download

File name si6820dq.pdf

Si6820DQ Vishay Siliconix N-Channel, Reduced Qg, MOSFET with Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.160 @ VGS = 4.5 V "1.9 20 0.260 @ VGS = 3.0 V "1.5 SCHOTTKY PRODUCT SUMMARY VF (v) VKA (V) Diode Forward Voltage IF (A) 20 0.5 V @ 1 A 1.5 D K TSSOP-8 D 1 D 8 K G S 2 Si6820DQ 7 A S 3 6 A G 4 5 A S A Top View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Drain-Source Voltage (MOSFET) VDS 20 Reverse Voltage (Schottky) VKA 20 V Gate-Source Voltage (MOSFET) VGS "12 TA = 25_C "1.9 Continuous Drain Current (TJ = 150_C) (MOSFET)a, b 150 C) ID TA = 70_C "1.5 Pulsed Drain Current (MOSFET) IDM "8 A Continuous Source Current (MOSFET Diode Conduction)a, b IS 1.0 Average Foward Current (Schottky) IF 1.5 Pulsed Foward Current (Schottky) IFM 30 TA = 25_C 1.2 Maximum Power Dissipation (MOSFET)a, b TA = 70_C 0.76 PD