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STL11N3LLH6
N-channel 30 V, 0.006 , 11 A PowerFLATTM (3.3 x 3.3)
STripFETTM VI DeepGATETM Power MOSFET
Features
RDS(on)
Order code VDSS ID
max.
STL11N3LLH6 30 V 0.0075 11 A (1)
1. The value is rated according Rthj-pcb
RDS(on) * Qg industry benchmark
Extremely low on-resistance RDS(on) PowerFLATTM (3.3 x 3.3)
High avalanche ruggedness
Low gate drive power losses
Very low switching gate charge
Application Figure 1. Internal schematic diagram
Switching applications
Description
This product is a 30 V N-channel STripFETTM VI
Power MOSFET based on the ST's proprietary
STripFETTM technology, with a new gate structure.
The resulting Power MOSFET exhibits the lowest
RDS(on) in all packages.
Table 1. Device summary
Order code Marking Package Packaging
STL11N3LLH6 11N3L PowerFLATTM (3.3 x 3.3) Tape and reel
September 2010 Doc ID 17755 Rev 1 1/10
www.st.com 10
Contents STL11N3LLH6
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3 Test circuits .............................................. 6
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
2/10 Doc ID 17755 Rev 1
STL11N3LLH6 Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage (VGS = 0) 30 V
VGS Gate-source voltage