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STL11N3LLH6 N-channel 30 V, 0.006 , 11 A PowerFLATTM (3.3 x 3.3) STripFETTM VI DeepGATETM Power MOSFET Features RDS(on) Order code VDSS ID max. STL11N3LLH6 30 V 0.0075 11 A (1) 1. The value is rated according Rthj-pcb RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) PowerFLATTM (3.3 x 3.3) High avalanche ruggedness Low gate drive power losses Very low switching gate charge Application Figure 1. Internal schematic diagram Switching applications Description This product is a 30 V N-channel STripFETTM VI Power MOSFET based on the ST's proprietary STripFETTM technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. Table 1. Device summary Order code Marking Package Packaging STL11N3LLH6 11N3L PowerFLATTM (3.3 x 3.3) Tape and reel September 2010 Doc ID 17755 Rev 1 1/10 www.st.com 10 Contents STL11N3LLH6 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Test circuits ... 6 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 2/10 Doc ID 17755 Rev 1 STL11N3LLH6 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 30 V VGS Gate-source voltage